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Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates

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Abstract

The electrophysical and phosphorescence characteristics, as well as the surface morphology, of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (110) crystallographic orientation are studied. The silicon-doped epitaxial layers were grown at temperatures from 410 to 680°C with arsenic-to-gallium flux ratios from 14 to 84. The ranges of the growth conditions for obtaining the smoothest epitaxial film surface are determined by atomic force microscopy. The behavior of silicon atoms in GaAs is interpreted using analysis of the photoluminescence spectra of the grown samples taking into account that silicon atoms occupy Ga or As sites, i.e., taking into account the appearance of SiGa and SiAs point defects, as well as of arsenic and gallium vacancies VAs and VGa.

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Funding

This work was supported by the Russian Foundation for Basic Research (project nos. 18-32-20207 mol-a-ved and 18-32-00157 mol_a).

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Authors and Affiliations

  1. Mokerov Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    G. B. Galiev, E. A. Klimov, S. S. Pushkarev & A. N. Klochkov

  2. National Research University “MIET”, 124498, Zelenograd, Moscow, Russia

    A. A. Zaitsev

Authors
  1. G. B. Galiev
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  2. E. A. Klimov
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  3. A. A. Zaitsev
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  4. S. S. Pushkarev
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  5. A. N. Klochkov
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Corresponding author

Correspondence to S. S. Pushkarev.

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The authors declare that they have no conflict of interest.

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Translated by M. Basieva

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Galiev, G.B., Klimov, E.A., Zaitsev, A.A. et al. Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates. Opt. Spectrosc. 128, 877–884 (2020). https://doi.org/10.1134/S0030400X20070061

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