Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

Yanhao Wang; Jianwei Gao; Bin Wei; Yingkuan Han; Chao Wang; Yakun Gao; Hong Liu; Lin Han; Yu Zhang

doi:10.1039/D0NR04120C

Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications†

Yanhao Wang,^a Jianwei Gao,^a Bin Wei,^b Yingkuan Han,^b Chao Wang,^a Yakun Gao,^a Hong Liu,

*^cd Lin Han

*^a and Yu Zhang*^a

Author affiliations

* Corresponding authors

^a Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
E-mail: hanlin@sdu.edu.cn, yuzhang@sdu.edu.cn

^b School of Microelectronics, Shandong University, Jinan 250010, China

^c State Key Laboratory of Crystal Materials, Shandong University, Jinan 250010, China
E-mail: hongliu@sdu.edu.cn

^d Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250010, China

Abstract

Indium selenide (InSe) photodetection devices attract significant research interest. However, InSe is unstable and degrades rapidly in ambient conditions, thus it is still a challenge to fabricate stable optoelectronic devices. In this work, multilayer InSe FETs are fabricated, and their photoresponse properties are investigated. Both positive and negative photoconductivities are observed for the first time in the same InSe FET in a wide spectral range from 450 nm to 660 nm, which can be tuned through changing either the gate bias or the source–drain bias. A physical mechanism is proposed to explain the dual-photoresponse phenomenon in our devices. Based on the proposed physical mechanism, as a proof of concept, a facile and simple approach is used to eliminate the negative photoconductivity of the InSe FET. Our results will offer valuable strategies for stable multilayer InSe optoelectronic device design, and a practical scheme for improving the performance of other transition metal dichalcogenide devices as well.

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DOI: https://doi.org/10.1039/D0NR04120C
Article type: Paper
Submitted: 29 May 2020
Accepted: 30 Jul 2020
First published: 01 Sep 2020

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Nanoscale, 2020,12, 18356-18362

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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

Y. Wang, J. Gao, B. Wei, Y. Han, C. Wang, Y. Gao, H. Liu, L. Han and Y. Zhang, Nanoscale, 2020, 12, 18356 DOI: 10.1039/D0NR04120C

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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications†

Abstract

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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

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