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Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect

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Abstract

The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.

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REFERENCES

  1. A. Fert, Rev. Mod. Phys. 80, 1517 (2008).

    Article  ADS  Google Scholar 

  2. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).

    Article  ADS  Google Scholar 

  3. D. E. Nikonov and I. A. Young, Proc. IEEE 101, 2498 (2013).

    Article  Google Scholar 

  4. R. Jansen, Nat. Mater. 11, 400 (2012).

    Article  ADS  Google Scholar 

  5. L. Thomas, G. Jan, J. Zhu, H. Liu, Y. J. Lee, S. Le, R.-Y. Tong, K. Pi, Y.-J. Wang, D. Shen, R. He, J. Haq, J. Teng, V. Lam, K. Huang, T. Zhong, T. Torng, and P.‑K. Wang, J. Appl. Phys. 115, 172615 (2014).

    Article  ADS  Google Scholar 

  6. A. Fert and H. Jaffres, Phys. Rev. B 64, 184420 (2001).

    Article  ADS  Google Scholar 

  7. X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlid, J. Zhang, K. S. M. Reddy, S. D. Flexner, C. J. Palmstrøm, and P. A. Crowell, Nat. Phys. 3, 197 (2007).

    Article  Google Scholar 

  8. R. Jansen, S. P. Dash, S. Sharma, and B. C. Min, Semicond. Sci. Technol. 27, 083001 (2012).

    Article  ADS  Google Scholar 

  9. S. Lee, F. Rortais, R. Ohshima, Y. Ando, S. Miwa, Y. Suzuki, H. Koike, and M. Shiraishi, Phys. Rev. B 99, 064408 (2019).

    Article  ADS  Google Scholar 

  10. A. Spiesser, Y. Fujita, H. Saito, S. Yamada, K. Hamaya, W. Mizubayashi, K. Endo, S. Yuasa, and R. Jansen, Phys. Rev. Appl. 11, 044020 (2019).

    Article  ADS  Google Scholar 

  11. A. S. Tarasov, A. V. Lukyanenko, I. A. Tarasov, I. A. Bondarev, T. E. Smolyarova, N. N. Kosyrev, V. A. Komarov, I. A. Yakovlev, M. N. Volochaev, L. A. Solovyov, A. A. Shemukhin, S. N. Varnakov, S. G. Ovchinnikov, G. S. Patrin, and N. V. Volkov, Thin Solid Films 642, 20 (2017).

    Article  ADS  Google Scholar 

  12. A. S. Tarasov, I. A. Bondarev, M. V. Rautskii, A. V. Lu-kyanenko, I. A. Tarasov, S. N. Varnakov, S. G. Ovchinnikov, and N. V. Volkov, J. Surf. Invest.: X-ray Synchrotr. Neutron Tech. 12, 633 (2018).

    Article  Google Scholar 

  13. A. S. Tarasov, A. V. Lukyanenko, M. V. Rautskii, I. A. Bondarev, D. A. Smolyakov, I. A. Tarasov, I. A. Yakovlev, S. N. Varnakov, S. G. Ovchinnikov, F. A. Baron, and N. V. Volkov, Semicond. Sci. Technol. 34, 035024 (2019).

    Article  ADS  Google Scholar 

  14. N. V. Volkov, A. S. Tarasov, D. A. Smolyakov, A. O. Gus-taitsev, M. V. Rautskii, A. V. Lukyanenko, M. N. Volochaev, S. N. Varnakov, I. A. Yakovlev, and S. G. Ov-chinnikov, AIP Adv. 7, 015206 (2017).

    Article  ADS  Google Scholar 

  15. Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya, J. Appl. Phys. 113, 013916 (2013).

    Article  ADS  Google Scholar 

  16. Y. Song, O. Chalaev, and H. Dery, Phys. Rev. Lett. 113, 167201 (2014).

    Article  ADS  Google Scholar 

  17. M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya, Phys. Rev. B 95, 115302 (2017).

    Article  ADS  Google Scholar 

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Funding

This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075- 15-2019-1886).

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Authors and Affiliations

  1. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

    A. S. Tarasov, A. V. Luk’yanenko, I. A. Bondarev, I. A. Yakovlev, S. N. Varnakov, S. G. Ovchinnikov & N. V. Volkov

  2. Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041, Krasnoyarsk, Russia

    A. S. Tarasov, A. V. Luk’yanenko, I. A. Bondarev, S. G. Ovchinnikov & N. V. Volkov

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  1. A. S. Tarasov
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  2. A. V. Luk’yanenko
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  3. I. A. Bondarev
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  4. I. A. Yakovlev
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  5. S. N. Varnakov
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  6. S. G. Ovchinnikov
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  7. N. V. Volkov
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Correspondence to A. S. Tarasov.

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The authors declare that they have no conflict of interest.

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Translated by E. Bondareva

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Tarasov, A.S., Luk’yanenko, A.V., Bondarev, I.A. et al. Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect. Tech. Phys. Lett. 46, 665–668 (2020). https://doi.org/10.1134/S1063785020070135

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  • DOI: https://doi.org/10.1134/S1063785020070135

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