Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”

Pejović, Milić; Ciraj-Bjelac, Olivera; Kovačević, Milojko; Rajović, Zoran; Ilić, Gvozden

doi:https://doi.org/10.1155/2020/4258307

International Journal of Photoenergy

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Radiation Effects in Solar Cells and Optoelectronic Devices

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Corrigendum | Open Access

Volume 2020 | Article ID 4258307 | https://doi.org/10.1155/2020/4258307

Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”

Milić Pejović,¹Olivera Ciraj-Bjelac,²Milojko Kovačević,²Zoran Rajović,³and Gvozden Ilić³

Received16 Apr 2020

Accepted22 Jun 2020

Published31 Aug 2020

In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” [1], there was an error in the drawing of Figure 2, which should be corrected as follows:

References

M. Pejović, O. Ciraj-Bjelac, M. Kovačević, Z. Rajović, and G. Ilić, “Sensitivity of p-channel MOSFET to X- and gamma-ray irradiation,” International Journal of Photoenergy, vol. 2013, Article ID 158403, 6 pages, 2013.
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Copyright © 2020 Milić Pejović et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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