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High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide

  • PHYSICAL PROCESSES IN ELECTRON DEVICES
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Abstract

This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that the fabricated diodes are capable of dissipating energy up to 2.9 J/cm2 in the mode of single avalanche current pulses (1-μs pulse duration). The numerical computation of the unsteady heat process shows that self-heating by an avalanche pulse causes the local temperature in the base of the diodes to reach at least 1100 K.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    P. A. Ivanov, T. P. Samsonova, A. S. Potapov & M. F. Kudoyarov

Authors
  1. P. A. Ivanov
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  2. T. P. Samsonova
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  3. A. S. Potapov
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  4. M. F. Kudoyarov
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Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Translated by Yu. Kornienko

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Ivanov, P.A., Samsonova, T.P., Potapov, A.S. et al. High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide. J. Commun. Technol. Electron. 65, 956–961 (2020). https://doi.org/10.1134/S1064226920070050

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  • DOI: https://doi.org/10.1134/S1064226920070050

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