Abstract—
We report results on frequency and temperature dependences of dielectric properties (dielectric permittivity and dielectric loss tangent) of amorphous silicon–carbon films produced using different precursors: poly(phenylmethylsiloxane) (PPMS) and poly(methylsiloxane) (PMS). It has been shown that the PPMS-based films consist of a well-defined polar dielectric, whereas the PMS-based films consist of a weakly polar dielectric. At the same time, their high-frequency dielectric permittivities differ relatively little (4.9 and 4.4, respectively, at 300 K and 1 MHz). We analyze the dielectric properties of the films as functions of frequency and temperature and in relation to the nature of the precursor.
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This work was supported by the Russian Foundation for Basic Research, grant no. 19-07-00021.
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Barinov, A.D., Gurinovich, T.D., Popov, A.I. et al. Effect of Precursor on the Dielectric Properties of Diamond-Like Silicon–Carbon Films. Inorg Mater 56, 799–808 (2020). https://doi.org/10.1134/S0020168520080026
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DOI: https://doi.org/10.1134/S0020168520080026