Abstract
Electron structure of bulk and two-dimensional SrTiO3 (2D-SrTiO3) were calculated using the first-principle approach based on the density functional theory (DFT) with GGA + U methods. An accurate direct band gap of bulk SrTiO3 of 3.52 eV and indirect band gap of 3.06 eV were obtained with the optimum UTi-3d = 6.0 eV and USr-3d = 3.0 eV. It is found that the electronic structure of 2D-SrTiO3 is strongly affected by the surface atoms. Most interestingly, the band gap of 2D-SrTiO3 is much smaller than that of the bulk material and is nearly independent of thickness. The origin of this behavior is traced to the nature of the conduction band in 2D-SrTiO3.
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Acknowledgments
Computations were performed on the Niagara supercomputer at the SciNet HPC Consortium. SciNet is funded by the Canada Foundation for Innovation, the Government of Ontario, Ontario Research Fund - Research Excellence, and the University of Toronto. We also acknowledge NSERC for their generous support.
Funding
This study was funded by the Natural Science Foundation of Zhejiang Province of China (Grant No. LQ17B030004) and NSERC.
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Chen, A., Nair, S.V., Miljkovic, B. et al. Electronic structure of bulk and two-dimensional SrTiO3: DFT calculation with GGA + U methods. J Nanopart Res 22, 259 (2020). https://doi.org/10.1007/s11051-020-04994-5
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DOI: https://doi.org/10.1007/s11051-020-04994-5