Journal of Materiomics

Journal of Materiomics

Volume 7, Issue 1, January 2021, Pages 59-68
Journal of Materiomics

Opinion paper
Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring

https://doi.org/10.1016/j.jmat.2020.08.003Get rights and content
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Highlights

  • A valid strategy to improve the piezoelectricity of Bi4Ti3O12-based systems is proposed by tailoring oxygen vacancy defects.

  • Excellent piezoelectricity (d33) 32.1 pC/N and Curie temperature (Tc) 659 °C are gotten in the Bi4Ti3O12-based ceramics.

  • Bi4Ti3O12-based ceramics is featured with excellent piezoelectric stability and low conductivity (∼10−7 Ω−1 cm−1 at 500 °C).

Abstract

Bismuth titanate (Bi4Ti3O12, BIT) piezoelectric materials have attracted increasing attention due to their high-temperature applications. However, it is quite challenging to simultaneously achieve outstanding piezoelectric properties and high Curie temperature in BIT-based systems. In this study, oxygen vacancy defects tailoring strategy was utilized to solve this problem, excellent piezoelectric coefficient (32.1 pC/N), and ultrahigh Curie temperature (659 °C) are gotten in Bi4Ti3-x(Mn1/3Nb2/3)xO12 (BTMN) ceramics, which are among the top values in the BIT-based ceramics. More importantly, the (Mn1/3Nb2/3)(4+δ)+ complex-ion modified Bi4Ti3O12-based ceramics are characterized with excellent piezoelectric stability up to 500 °C (d33 > 30.0 pC/N at 500 °C)) and significantly reduced conductivity (only ∼ 10−7 Ω−1 cm−1 at 500 °C). Moreover, enhanced ferroelectricity and good dielectric stability were also obtained. The better comprehensive properties can be ascribed to two aspects. First, the concentration of oxygen vacancy defects is obviously reduced, and their distribution is effectively controlled in BITMN ceramics. Second, the introduction of (Mn1/3Nb2/3)(4+δ)+ complex-ion gives rise to the antiphase boundaries and massive ferroelectric domain walls. This works not only reveal the high potential of BITMN ceramics for high-temperature piezoelectric applications but also deepen the understanding of the structure-properties relationship in BIT-based materials.

Keywords

Bi4Ti3O12
(Mn1/3Nb2/3)(4+δ)+ complex-ion
Oxygen vacancy defects
Piezoelectricity
High-temperature

Cited by (0)

Xianlin Dong received his Ph.D. in materials sciences from the Chinese Academy of Sciences in 1992. Since 1992, he has been a professor in the Shanghai Institute of Ceramics, Chinese Academy of Sciences. His research focuses on high performance piezoelectric ceramics and devices, high energy storage medium materials and multilayer devices, and functional oxide thin films.

Zhiyong Zhou received his Ph.D. in materials sciences from the Chinese Academy of Sciences in 2007. From 2008 to 2012, he worked as a researcher in Germany and UK. Since 2012, he has been an associate professor in the Shanghai Institute of Ceramics, Chinese Academy of Sciences. His research focuses on structural design, property modulation, service stability and engineering application of high-temperature piezoelectric ceramics/films.

Xinchun Xie is currently pursuing her Ph.D. degree under the supervision of Prof. Xianlin Dong at the University of Chinese Academy of Sciences. Her research focuses on the bismuth layer-structured piezoelectric ceramics.

Peer review under responsibility of The Chinese Ceramic Society.