Abstract
Lattice changes of macroporous silicon were studied under variations in the etching conditions of macropores. It was established that under all the etching conditions, additional mechanical stresses and corresponding deformations arise up to the appearance of dislocations in the macroporous layer at elevated voltage or current.
Similar content being viewed by others
References
A. Birner, R.B. Wehrspohn, U.M. Gösele, and K. Busch, Adv. Mater. 13, 377 (2001). https://doi.org/10.1002/1521-4095(200103)13:6<377::AID-ADMA377>3.0.CO;2-X.
L.A. Karachevtseva, Semicond. Phys. Quantum Electron. Optoelectron. 7, 430 (2004).
D.V. Bru and Á.R. Martinez, New Research on Silicon—Structure, Properties, Technology, Chapter7 (Norderstedt: Books on Demand, 2017), pp. 155–182. https://doi.org/10.5772/67698.
K.P. Konin, O.Y. Gudymenko, V.P. Kladko, O.O. Lytvynenko, and D.V. Morozovska, J. Electron. Mater. 47, 5113 (2018). https://doi.org/10.1007/s11664-018-6502-4.
E.V. Astrova, V.V. Ratnikov, A.D. Remenyuk, and I.L. Shul’pina, Semiconductors 36, 1033 (2002). https://doi.org/10.1134/1.1507287.
V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993). https://doi.org/10.1149/1.2220919.
Acknowledgments
The authors thank Sci.Dr. L.A. Matveeva for profilometric measurements and E.Yo. Strons’ka for help in the article preparation.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Konin, K.P., Gudymenko, O.Y., Klad’ko, V.P. et al. Residual Deformations and Mechanical Stresses in Macroporous and Nonporous Silicon Under Normal Etching Conditions. J. Electron. Mater. 49, 5240–5243 (2020). https://doi.org/10.1007/s11664-020-08319-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-020-08319-z