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Ferroelectric tunnel junctions with high tunnelling electroresistance

A van der Waals ferroelectric tunnel junction with asymmetric metal and graphene contacts exhibits a high resistance ratio between on and off states, and could be of value in the development of low-power computing.

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Fig. 1: Ferroelectric tunnelling junctions and their tunnelling electroresistances.

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Correspondence to Xinran Wang or Jianlu Wang.

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Wang, X., Wang, J. Ferroelectric tunnel junctions with high tunnelling electroresistance. Nat Electron 3, 440–441 (2020). https://doi.org/10.1038/s41928-020-0463-3

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