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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The luminescence properties of arrays of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups, including those embedded in two-dimensional photonic crystals, are studied. It is shown that the incorporation of an array of ordered solitary Ge(Si) islands and their groups into photonic crystals results in an increase in the intensity of their photoluminescence signal at liquid-nitrogen temperature. The maximum increase in the intensity (by a factor of up to ~30) is observed for an ordered array of solitary Ge(Si) islands. The increase in the intensity is attributed to the interaction of emission from islands with photonic-crystal radiative modes. This interaction is more efficient in the case of an array of solitary islands. Due to such interaction the luminescence signal from ordered solitary Ge(Si) islands incorporated into photonic crystals is observed at up to room temperature.

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ACKNOWLEDGMENTS

We thank V.A. Armbrister for conducting the MBE growth of Ge/Si structures, the Multiple-Access Center “High Technologies and Analytics of Nanosystems”, Novosibirsk State University, and the Multiple-Access Center “Nanostructures”, Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, for placing at our disposal the measuring equipment.

Funding

The part of the study concerned with the formation of structures with quantum dots incorporated into photonic crystals was supported by the Russian Foundation for Basic Research, project nos. 16-29-14031 and 19-42-540002-r_a, and the Government of the Novosibirsk region. The part of the study concerned with luminescence measurements was supported by the Government of the Russian Federation, state order no. 0035-2019-0020, and the Russian Foundation for Basic Research, project no. 18-29-20016-mk.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, A. V. Nenashev, P. A. Kuchinskaya & A. V. Dvurechenskii

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, A. V. Peretokin, M. V. Shaleev & S. A. Gusev

  3. Novosibirsk State University, 630090, Novosibirsk, Russia

    E. E. Rodyakina, A. V. Nenashev & A. V. Dvurechenskii

  4. State Technical University of Nizhny Novgorod, 603155, Nizhny Novgorod, Russia

    A. V. Peretokin

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  1. Zh. V. Smagina
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  2. A. V. Novikov
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  3. M. V. Stepikhova
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Correspondence to Zh. V. Smagina.

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Translated by E. Smorgonskaya

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Smagina, Z.V., Novikov, A.V., Stepikhova, M.V. et al. Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals. Semiconductors 54, 853–859 (2020). https://doi.org/10.1134/S1063782620080230

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  • DOI: https://doi.org/10.1134/S1063782620080230

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