Abstract
A self-adaptive pulse generator featuring with short pulse width to realize lower power consumption and higher reliability of high voltage gate driver IC is proposed. Under the control of the feedback signal from the output of the high voltage level shifter, the pulse width of the input narrow pulse can be decreased adaptively without affecting the normal operating function. The proposed self-adaptive pulse generator is implemented in 100 V BCD process. Measured results show that the pulse width reduced from 211.6 to 108.3 ns, the high side operating current decreased from 175.54 to 120.53 µA at 25 °C when operations at 100 kHz, and the pulse width tend to be stable as temperature changes.
Similar content being viewed by others
References
Song, K., et al. (2018) A new 1200 V HVIC with high side edge trigger in order to solve the latch on failure by the negative VS surge. In 2018 IEEE 30th international symposium on power semiconductor devices and ICs (ISPSD). (IEEE).
Zhang, Y, et al. (2015). A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC. In 2015 IEEE 27th international symposium on power semiconductor devices and ICs (pp. 173–176).
Zhu, J., Sun, W., Zhang, Y., Lu, S., Shi, L., & Zhang, S. (2015). An integrated bootstrap diode emulator for 600 V high voltage gate drive IC with P-Sub/PEpi technology. IEEE Transactions on Power Electronics, 31(1), 518–523.
Hitoshi, M., et al. (2016). High reliability 600V high voltage integrated circuit for automotive applications. In PCIM Asia 2016; international exhibition and conference for power electronics, intelligent motion, renewable energy and energy management, VDE.
Declerq, M. J., Schubert, M., & Clement, F. (1993). 5V-to-75V CMOS output interface circuits. In ISSCC (pp. 162–163).
Jing, Z., Zhang, Y., Sun, W., et al. (2018). Noise immunity and its temperature characteristics study of the capacitive-loaded level shift circuit for high voltage gate drive IC. IEEE Transactions on Industrial Electronics, 65(4), 3027–3034.
Yamaji, M., Akahane, M., & Jonishi, A. (2011). 800 V class HVIC technology. Fuji Electric Review, 57(3), 96–102.
Cho, K., Lee, S., & Kwon, D. (2012). A high voltage half bridge gate driver with mismatch-insensitive dead-time generator. IEICE Electronics Express, 9, 1322–1328. https://doi.org/10.1587/elex.9.1322.
Yamaji, M., Jonishi, A., Tanaka, T., Sumida, H., Hashimoto, Y. (2015). A new enhanced noise tolerance technique for a 600V high voltage IC. In 2015 IEEE 11th international conference on power electronics and drive systems, Sydney, NSW (pp. 108–111).
Dolny, G. M., Nostrand, G. E., & Hill, K. E. (1992). The effect of temperature on lateral DMOS transistors in a power IC technology. IEEE Transactions on Electron Devices, 39(4), 990–995.
Bryson, S. W. (2006). High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator. US Patent No.7106105.
FAICHILD. (2012). Recommendations to avoid short pulse width issues in HVIC gate driver applications, application note
Online material “FAN7380,” Datasheet, www.onsemi.com (2017).
Online material “FAD6263,” Datasheet, www.onsemi.com (2019).
Online material “LM5105,” Datasheet, www.ti.com (2016).
Online material “DGD0506,” Datasheet, www.diodes.com (2017).
Acknowledgements
This work was supported by the national natural science foundation of China (61874026, 61804026), the national key research and development plan (2017YFB0402904), the Jiangsu Planned Projects for Postdoctoral Research Funds (2018K001A), the China postdoctoral science foundation (2019M651647, 2019T120376), the key research and development plan of Jiangsu (BE2018003-3) and the fundamental research funds for the central universities.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Yu, S., Zhu, J., Lu, Y. et al. A self-adaptive pulse generator to realize extremely low power consumption and high reliability of high voltage gate driver IC. Analog Integr Circ Sig Process 105, 13–20 (2020). https://doi.org/10.1007/s10470-020-01695-w
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10470-020-01695-w