Abstract
The physical parameters of the silicon noise-generator diodes manufactured on single-crystalline silicon substrates by planar technology are studied by the method of the measurement of the current–voltage characteristics (I–V curves) and capacity–voltage characteristics (C–V curves). It is found that the value of the reverse current in the generator diodes is determined by ionization of the process-related (background) impurities forming the base of microplasmas (MPs) distributed non-uniformly by the volume of the crystal. The avalanche breakdown of the p-n junction of the generator diodes is probably caused by the engagement of the MPs related to the local nonuniformities of doping of the material of the substrate and the electric ionization of the deep-level impurities of the process-related (background) impurities, such as copper and iron.
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Translated by G. Levina
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Buslyuk, V.V., Odzhayev, V.B., Panfilenko, A.K. et al. Physical Parameters of the Broadband Noise-Generator Diodes. Russ Microelectron 49, 295–301 (2020). https://doi.org/10.1134/S1063739720040034
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DOI: https://doi.org/10.1134/S1063739720040034