Issue 34, 2020

Investigating the structure–function relationship in triple cation perovskite nanocrystals for light-emitting diode applications

Abstract

Organic metal halide perovskite nanocrystals are promising candidates for light-emitting diodes due to their narrow emission bandwidth, high photoluminescence quantum yield (PLQY), and color tunability. Nevertheless, these systems suffer from thermal instability, phase impurities, and a sensitivity to processing techniques. This study reports the first synthesis of novel Cs-containing triple cation perovskite nanocrystals with nominal stoichiometry Csx(MA0.17FA0.83)1−xPbBr3 (x = 0–0.15). The effect of Cs+ cation incorporation is thoroughly investigated using diffraction, microscopy and solid state MAS NMR techniques. The solid state 133Cs MAS NMR results reveals the distribution of the Cs+ cations is highly concentration and particle size dependent, with maximized surface/subsurface Cs+ concentrations being achieved with the smaller 5 mol% Cs system. These characteristics directly correlate improved surface passivation and environmental stability of the triple cation system. These triple cation nanocrystals exhibit a maximum photoluminescence quantum yield of ∼93% which upon translation to nanocrystalline LED devices delivers a maximum EQE of 7.4% (30 cd A−1) corresponding to a power efficiency of 34.87 lm W−1. This performance represents a marked improvement compared to CsPbBr3 nanocrystals (PL quantum yield ∼50%; maximum EQE of 2.5% (7.2 cd A−1)) fabricated under similar conditions.

Graphical abstract: Investigating the structure–function relationship in triple cation perovskite nanocrystals for light-emitting diode applications

Supplementary files

Article information

Article type
Paper
Submitted
26 Apr 2020
Accepted
01 Jul 2020
First published
03 Aug 2020
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2020,8, 11805-11821

Investigating the structure–function relationship in triple cation perovskite nanocrystals for light-emitting diode applications

P. Vashishtha, S. A. Veldhuis, S. S. H. Dintakurti, N. L. Kelly, B. E. Griffith, A. A. M. Brown, M. S. Ansari, A. Bruno, N. Mathews, Y. Fang, T. White, S. G. Mhaisalkar and J. V. Hanna, J. Mater. Chem. C, 2020, 8, 11805 DOI: 10.1039/D0TC02038A

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