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Thermal runaway evaluation using DSC1, VSP2, and kinetics models on Cu etchant and its waste in high-tech etching process

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Abstract

Cu etchant solutions have been widely used in etching processes because of their high etching efficiency and low cost for manufacturing electric products. Hydrogen peroxide (H2O2), a major components of Cu etchants, is known for its instability and reactivity under thermal induction, metal-ion catalysis, or pyrolysis; thus, Cu etchants have a higher risk of thermal explosion than other etchant solutions do. In this study, the exothermic reaction of the Cu etchant was initiated at approximately 70 °C, and the exothermic enthalpy (ΔH) of the first peak was measured to be approximately 274.4 J g−1 using differential scanning calorimetry 1 (DSC1). The American Society for Testing and Materials (ASTM)—Ozawa/Kissinger method, and Advanced Kinetics and Technology Solutions (AKTS)—Friedman simulation, were used to calculate the reaction kinetics. Thermal runaway and gas evolution were evaluated through vent sizing package 2 (VSP2). The pressure of the Cu etchant surged from atmospheric pressure to a maximum pressure of 225.075 psig, with a pressure increase of 168.684 psig min−1 in the VSP 2 adiabatic test. Finally, to improve the safety operation during the etching process, thermokinetic analysis was used to identify appropriate kinetic parameters for the thermal decomposition of the Cu etchant.

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Acknowledgements

The authors thank the China Medical University of Taiwan (CMU-108-MF-119) for providing financial support to this study and Prof. Shu, C.M. (Process Safety and Disaster Prevention Laboratory, YunTech) for AKTS and VSP2 support to carry out our work.

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  1. Department of Occupational Safety and Health, College of Public Health, China Medical University, 91, Hsueh-Shih Rd., Taichung, 40402, Taiwan, ROC

    Yu-Jung Lin, Zih-Syuan Lin & Yih-Wen Wang

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  1. Yu-Jung Lin
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  2. Zih-Syuan Lin
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Lin, YJ., Lin, ZS. & Wang, YW. Thermal runaway evaluation using DSC1, VSP2, and kinetics models on Cu etchant and its waste in high-tech etching process. J Therm Anal Calorim 144, 285–294 (2021). https://doi.org/10.1007/s10973-020-10094-2

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  • DOI: https://doi.org/10.1007/s10973-020-10094-2

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