Abstract
Electrochemical impedance spectroscopy is used to study red and green quantum-dot light-emitting diodes devices. The high-frequency loop is interpreted in terms of the thickness, dielectric constant, and resistivity distribution of the hole-injection layer. The analysis employed the device capacitance obtained from a measurement model analysis, the film thickness measured by scanning electron microscopy, and an interpretation of the impedance based on a power-law model. Impedance measurements performed on hole-transport–only devices yielded results that were consistent with the interpretation of the high-frequency capacitive loop in terms of the properties of the hole-injection layer.
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Funding
This work was supported by Nanophotonica and a matching grant from the University of Florida Industry Partnership (UFLIPS): Grant# OR-DRPD-UFLIPS-G-2018. Mark Orazem received financial support from the University of Florida Foundation Preeminence and the Dr. and Mrs. Frederick C. Edie term professorships.
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This paper is submitted in celebration of the 65th birthday of Prof. Fritz Scholz. One of the authors, Mark Orazem, met Prof. Scholz at the “First Workshop of Material Science for Corrosion Protection” held in 2017 in Santiago, Chile, where we discussed the importance of education in electrochemistry.
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You, C., Titov, A., Kim, B.H. et al. Impedance measurements on QLED devices: analysis of high-frequency loop in terms of material properties. J Solid State Electrochem 24, 3083–3090 (2020). https://doi.org/10.1007/s10008-020-04765-1
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DOI: https://doi.org/10.1007/s10008-020-04765-1