Weak Dimensionality Dependence and Dominant Role of Ionic Fluctuations in the Charge-Density-Wave Transition of NbSe2

Raffaello Bianco, Lorenzo Monacelli, Matteo Calandra, Francesco Mauri, and Ion Errea
Phys. Rev. Lett. 125, 106101 – Published 1 September 2020
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Abstract

Contradictory experiments have been reported about the dimensionality effect on the charge-density-wave transition in 2H NbSe2. While scanning tunneling experiments on single layers grown by molecular beam epitaxy measure a charge-density-wave transition temperature in the monolayer similar to the bulk, around 33 K, Raman experiments on exfoliated samples observe a large enhancement of the transition temperature up to 145 K. By employing a nonperturbative approach to deal with anharmonicity, we calculate from first principles the temperature dependence of the phonon spectra both for bulk and monolayer. In both cases, the charge-density-wave transition temperature is estimated as the temperature at which the phonon energy of the mode driving the structural instability vanishes. The obtained transition temperature in the bulk is around 59 K, in rather good agreement with experiments, and it is just slightly increased in the single-layer limit to 73 K, showing the weak dependence of the transition on dimensionality. Environmental factors could motivate the disagreement between the transition temperatures reported by experiments. Our analysis also demonstrates the predominance of ionic fluctuations over electronic ones in the melting of the charge-density-wave order.

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  • Received 17 April 2020
  • Accepted 30 July 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.106101

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Raffaello Bianco1,*, Lorenzo Monacelli2,3, Matteo Calandra3,4,5, Francesco Mauri2,3, and Ion Errea1,6,7,†

  • 1Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain
  • 2Dipartimento di Fisica, Università di Roma Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
  • 3Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
  • 4Dipartimento di Fisica, Università di Trento, Via Sommarive 14, 38123 Povo, Italy
  • 5Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252 Paris, France
  • 6Fisika Aplikatua 1 Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain
  • 7Donostia International Physics Center (DIPC), Manuel Lardizabal pasealekua 4, 20018 Donostia/San Sebastián, Spain

  • *raffaello.bianco@ehu.eus
  • ion.errea@ehu.eus

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Issue

Vol. 125, Iss. 10 — 4 September 2020

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