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Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors

外延生长范德华金属-半导体NbS2/MoS2异质结用 于增强晶体管和光电探测器性能

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Abstract

Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS2 metallic-semiconductor heterostructures. By using NbS2 as the contact electrodes, the field-effect mobility and current on-off ratio of MoS2 can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS2 as contact, the photodetector performance of MoS2 is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.

摘要

基于过渡金属硫族化合物的二维材料异质结, 由于其在下一 代高性能集成光电子器件中的潜在应用而备受关注. 虽然目前异 质结制备很广泛, 但是外延生长具有干净锐利界面的原子级别厚 度金属-半导体异质结仍然备受挑战. 另外, 基于金属-半导体异质 结的光电性能还鲜有研究. 这里, 我们报道了高质量垂直金属-半导 体异质结的合成, 其中金属性质的单层NbS2外延生长于单层MoS2 表层. 使用NbS2作为电极接触的MoS2晶体管, 其迁移率和电流开 关比相对于Ti/Au接触的MoS2晶体管分别提升了6倍和2个数量级. 另外, 基于NbS2作为电极接触的MoS2光电探测器, 其响应时间和光 响应可以分别提升至少30倍和20倍. 本工作通过简单的化学气相 沉积(CVD)方法制备的原子级别厚度的金属-半导体异质结和二维 金属材料在接触方面的作用为其在光电子器件中的应用奠定了基 础.

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Acknowledgements

This work was financially supported by the National Key R&D Program of China (2018YFA0306900 and 2018YFA0305800), and the National Natural Science Foundation of China (51872012).

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Peng Zhang  (张鹏), Xingguo Wang  (王兴国), Huaning Jiang  (江华宁), Yiwei Zhang  (张亦玮) & Yongji Gong  (宫勇吉)

  2. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China

    Ce Bian  (边策) & Lihong Bao  (鲍丽宏)

  3. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Jiafu Ye  (叶家富) & Weida Hu  (胡伟达)

  4. Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovation Materials (AIIM), University of Wollongong, Wollongong, NSW, 2522, Australia

    Ningyan Cheng  (程宁燕) & Yi Du  (杜轶)

  5. State Key Laboratory of Organic-Inorganic Composites, Beijing Key Laboratory of Electrochemical Process and Technology for Materials, Beijing University of Chemical Technology, Beijing, 100029, China

    Yi Wei  (魏怡)

  6. Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing, 100191, China

    Yi Du  (杜轶)

  7. Songshan Lake Materials Laboratory, Dongguan, 523803, China

    Lihong Bao  (鲍丽宏)

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  1. Peng Zhang  (张鹏)
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Contributions

Gong Y and Zhang P conceived and designed the experiments. Zhang P synthesized the heterojunction; Bian C made the devices and carried out the measurement; Ye J carried out the photodetector measurement; Cheng N carried out the HAADF-STEM experiments. All the authors participated in discussions and approved the manuscript.

Corresponding authors

Correspondence to Lihong Bao  (鲍丽宏), Weida Hu  (胡伟达) or Yongji Gong  (宫勇吉).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Experimental details and supporting data, including the growth process, AFM, optical images, XPS, HAADF-STEM images, electrical properties are available in the online version of the paper.

Peng Zhang received his BS degree (2013) from the Department of Electronic Engineering, Nantong University, Jiangsu, and PhD degree (2018) from the Department of Electronic Engineering, East China Normal University, Shanghai. He is currently working as a postdoctoral fellow in the Department of Materials Science and Engineering, Beihang University, Beijing. His research interests focus on the controlled synthesis of novel low-dimension materials, and the application research of functional devices.

Ce Bian received his BSc degree from Shandong University. He is currently a PhD student at the Institute of Physics, Chinese Academy of Sciences. His research interests involve chemical vapor deposition and device applications of two-dimensional materials and heterostructures.

Jiafu Ye received his BS degree in materials science and engineering from Central South University, Changsha, China, in 2017. He is currently working towards his PhD degree in condensed matter physics at Shanghai Institute of Technical Physics, Chinese Academy of Sciences, under the supervision of Prof. Weida Hu. His current research interests focus on the synthesis and characterizations of novel low-dimensional materials, and their potential applications in electronic and photoelectronic devices.

Lihong Bao received his PhD degree from the Institute of Physics, Chinese Academy of Sciences. Now, he is an associate professor at the Institute of Physics, Chinese Academy of Sciences. His research interests focus on the construction and electronic transport properties of low-dimensional electronic devices.

]Weida Hu received his PhD degree in microelectronics and solid-state electronics from Shanghai Institute of Technology Physics, Chinese Academy of Sciences, in 2007. He is currently a full professor in Shanghai Institute of Technology Physics, Chinese Academy of Sciences. His current research interests focus on the fabrication and characterizations of infrared photoelectronic devices.

Yongji Gong received his BS degree (2011) in chemistry from Peking University and PhD degree (2015) in chemistry from Rice University. Then, he worked as postdoctoral fellow in the Department of Materials Science and Engineering in Stanford University (2016-2017). From 2017, he has been a professor in the Department of Materials Science and Engineering, Beihang University. His scientific interest focuses on the controllable synthesis and propertiy tuning of 2D materials for electronics and energy storage and conversion.

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40843_2020_1355_MOESM1_ESM.pdf

Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors

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Zhang, P., Bian, C., Ye, J. et al. Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors. Sci. China Mater. 63, 1548–1559 (2020). https://doi.org/10.1007/s40843-020-1355-2

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