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Passively-Q-Switched 1.33 μm Nd:Luysgg Laser with the Bi2Se3 Topological Insulator as a Saturable Absorber

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Journal of Russian Laser Research Aims and scope

In this work, we demonstrate a passively-Q-switched 1.33 μm Nd:Lu2YSc1.5Ga3.5O12 (Nd:LuYSGG) laser based on the Bi2Se3 topological insulator (TI) as a saturable absorber (SA). We obtain pulse widths as low as 146 ns at a pulse repetition rate of 349.5 kHz and a pulse energy of 1.03 μJ, which provides a peak power of 7.05 W. These results represent some of best yet published in terms of repetition rate, pulse width, and peak power for TI-based Q-switched 1.3 μm lasers, which indicates that TIs are suitable as SAs in the 1.3 μm region.

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Authors and Affiliations

  1. School of Science Shandong Jianzhu University, Jinan, 250101, China

    Baolin Wang

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  1. Baolin Wang
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Correspondence to Baolin Wang.

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Wang, B. Passively-Q-Switched 1.33 μm Nd:Luysgg Laser with the Bi2Se3 Topological Insulator as a Saturable Absorber. J Russ Laser Res 41, 358–363 (2020). https://doi.org/10.1007/s10946-020-09886-6

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  • DOI: https://doi.org/10.1007/s10946-020-09886-6

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