Skip to main content
SpringerLink
Log in

Influence of Internal Electric Field on the Spectral Characteristics of Blue GaN-Based Superluminescent Light-Emitting Diodes

  • Research Paper
  • Published:
Iranian Journal of Science and Technology, Transactions A: Science Aims and scope Submit manuscript

Abstract

The effects of internal electric field on the spectral characteristics of InxGa1−xN/GaN superluminescent light-emitting diodes are studied theoretically. The Schrödinger and Poisson equations and the rate and optical propagating equations are solved in the presence of the internal electric field. By increasing the indium mole fraction in the quantum well, the internal electric field increases linearly. The injection current affects the intensity, bandwidth and wavelength of the spectrum. The results show that the internal electric field shifts the spectral radiations to the red region. Also, in the presence of internal electric field, the peak intensity of spectra increases, and the optical gain reduces.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  • Alahyarizadeh Gh, Aghajani H, Mahmodi H, Rahmani R, Hassan Z (2012) Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations. Opt Laser Technol 44:12

    Google Scholar 

  • Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J (1999) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85:3222

    Google Scholar 

  • Arnaudov B, Domanevskii DS, Evtimova S, Ivanov Ch, Kakanakov R (2009) Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J 40:346

    Google Scholar 

  • Bunker KL, Garcia R, Russell PE (2005) Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode. Appl Phys Lett 86:082108

    Google Scholar 

  • Burns G (1990) Solid state physics. Academic Press, New York

    Google Scholar 

  • Cartwright AN, Sweeney PM, Prunty T, Bour DP, Kneissel M (1999) Electric field distribution in strained p-i-n GaN/InGaN multiple quantum well structures. MRS Internet J Nitride Semicond Res 4:1

    Google Scholar 

  • Chen J-R, Wu Y-C, Ling S-C, Ko T-S, Lu T-C, Kuo H-C, Kuo Y-K, Lu S (2010) Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes. Appl Phys B 98:779

    Google Scholar 

  • Chen S, Li W, Zhang Z, Childs D, Zhou K, Orchard J, Kennedy K, Hugues M, Clarke E, Ross I, Wada O, Hogg R (2015) GaAs based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot Structures. Nanoscale Res Lett 10:340

    Google Scholar 

  • David A, Grundmann MJ (2010) Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl Phys Lett 97:033501

    Google Scholar 

  • Fan WJ, Li MF, Chang TC (1996) Valence hole subbands and optical gain spectra of GaN/AlxGa1−xN strained quantum wells. J Appl Phys 80:3471

    Google Scholar 

  • Feltin E, Castiglia A, Cosendey G, Sulmoni L, Carlin JF, Grandjean N, Rossetti M, Dorsaz J, Laino V, Duelk M, Velez C (2009) Broadband blue superluminescent light-emitting diodes based on GaN. Appl Phys Lett 95:081107

    Google Scholar 

  • Fox M (2001) Optical properties of solids. Oxford University Press, Oxford

    Google Scholar 

  • Galczak J, Sarzala RP, Nakwaski W (2004) Spatial separation of recombining carriers within nitride GaN/(AlGa)N quantum wells induced by piezoelectric phenomena. Opto Electron Rev 12:369

    Google Scholar 

  • Hangleiter A, Im JS, Kollmer H, Heppel S, Off J, Scholz F (1998) The role of piezoelectric fields in GaN-based quantum wells. MRS Internet J Nitride Semicond Res 3:1

    Google Scholar 

  • Hardy MT, Kelchner KM, Lin YD, Hsu PS, Fujito K, Ohta H, Speck JS, Nakamura S, DenBaars SP (2009) m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching. Appl Phys Express 2:121004

    Google Scholar 

  • Kafar A, Stanczyk S, Grzanka S, Czernecki R, Leszczynski M, Suski T, Perlin P (2012) Cavity suppression in nitride based superluminescent diodes. J Appl Phys 111:083106

    Google Scholar 

  • Kim M-H, Schubert MF, Dai Q, Kim JK, SchubertE F, Piprek J, Park Y (2007) Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett 91:183507

    Google Scholar 

  • Ko TH, Adler DC, Fujimoto JG, Mamedov D, Prokhorov V, Shidlovsky V, Yakubovich S (2004) Ultra high resolution optical coherence tomography imaging with a broadband superluminescent diode light source. Opt Express 12:2112

    Google Scholar 

  • Kopp F, Eichler C, Lell A, Tautz S, Ristic J, Stojetz B, Ho C, Weig T, Schwarz UT, Strauss U (2013) Blue superluminescent light-emitting diodes with output power above 100 mW for picoprojection. Jpn J Appl Phys 52:08JH07

    Google Scholar 

  • Langer R, Simson J, Oritz V, Pelekanos NT, Barski A, Andre R, Godlewski M (1999) Giant electric fields in unstrained GaN single quantum wells. Appl Phys Lett 74:3827

    Google Scholar 

  • Leroux M, Grandjean N, Massies J, Gil B, Lefebvre P, Bigenwald P (1999) Barrier-width dependence of group-III nitrides quantum-well transition energies. Phys Rev B 60:1496

    Google Scholar 

  • Loeser M, Witzigmann B (2008) Multidimensional electro-opto-thermal modeling of broad-band optical devices. IEEE J Quantum Electron 44:505

    Google Scholar 

  • Matuschek N, Duelk M (2013) Modeling and simulation of superluminescent light emitting diodes (SLEDs). IEEE J Sel Top Quantum Electron 19:7800307

    Google Scholar 

  • Milani NM, Mohadesi V, Asgari A (2015) The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes. Phys E 71:64

    Google Scholar 

  • Nardelli MB, Rapcewicz K, Bemholic J (1997) Polarization field effects on the electron hole recombination dynamics in multiple quantum wells. Appl Phys Lett 71:3135

    Google Scholar 

  • Onuma T, Chichibu SF, Aoyama T, Nakajima K, Ahmet P, Azuhata T, Chikyow T, Sota T, Nagahama S, Mukai T (2003) Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double quantum well laser diode wafer operated at 450 nm. Jpn J Appl Phys 42:7276

    Google Scholar 

  • Park J, Li X (2006) Theoretical and numerical analysis of superluminescent diodes. J. Light wave Technol 24:2473

    Google Scholar 

  • Piprek J (2003) Semiconductor optoelectronic devices, introduction to physics and simulation. Elsevier Science, Amstredam

    Google Scholar 

  • Piprek J (2007) Nitride semiconductor devices: principles and simulation. Wiley, Berlin

    Google Scholar 

  • Rossetti M, Dorsaz J, Rezzonico R, Duelk M, Velez C, Feltin E, Castiglia A, Cosendey G, Carlin J-F, Grandjean N (2010) High power blue-violet superluminescent light emitting diodes with InGaN quantum wells. Appl Phys Exp 3:061002

    Google Scholar 

  • Rossi F, Salviati G, Pavesi M, Manfredi M, Meneghini M, Zanoni E, Zehnder U (2008) Field dependence of the carrier injection mechanisms in InGaN quantum wells: its effect on the luminescence properties of blue light emitting diodes. J Appl Phys 103:093504

    Google Scholar 

  • Ryou J-H, Yoder PD, Liu J, Lochne Z, Kim H, Choi S, Kim HJ, Dupuis RD (2009) Control of quantum-confined stark effect in InGaN-based quantum wells. IEEE J Sel Top Quantum Electron 15:1080

    Google Scholar 

  • Schubert MF, Schubert EF (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Appl Phys Lett 96:131102

    Google Scholar 

  • Sizov VS, Neploh VV, Tsatsulnikov AF, Sakharov AV, Lundin WV, Zavarin EE, Nikolaev AE, Mintairov AM, Merz JL (2010) Study of tunneling transport of carriers in structures with an InGaN/GaN active region. Semiconductors 44:1567

    Google Scholar 

  • Sizov DS, Bhat R, Zakharian A, Song K, Allen DE, Coleman S, Zah Ch (2011) Carrier transport in InGaN MQWs of aquamarine- and green-laser diodes. IEEE J Sel Top Quantum Electron 17:1390

    Google Scholar 

  • Takeuchi T, Sota Sh, Katsuragawa M, Komari M, Takeuchi H, Amano H, Akasaki I (1997) Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn J Appl Phys 36:382

    Google Scholar 

  • Wang J, Wang L, Wang L, Hao Z, Luo Y, Dempewolf A, Muller M, Bertram F, Christen J (2012) An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based lightemitting diodes. J Appl Phys 112:023107

    Google Scholar 

  • Witzigmann B, Laino V, Luisier M, Schwarz UT, Fischer H, Feicht G, Wegscheider W, Rumbolz C, Lell A, Harle V (2006) Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures. IEEE Phot Technol Lett 18:1600

    Google Scholar 

  • Yoshida Y, Kuwabara M, Yamashita Y, Uchiyama K, Kan H (2010) Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple quantum well laser diode. Appl Phys Lett 96:211122

    Google Scholar 

  • Zhao Y, Han W, Song J, Li X, Liu Y, Gao D, Du G, Cao H, Chang RPH (1999) Spontaneous emission factor for semiconductor superluminescent diodes. J Appl Phys 85:3945

    Google Scholar 

  • Zhao H, Arif RA, Tansu N (2009) Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm. IEEE J Sel Top Quantum Electron 15:1104

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Faculty of Science, Urmia University, Urmia, Iran

    H. Absalan & M. M. Golzan

  2. Department of Physics, Ahar Branch, Islamic Azad University, Ahar, Iran

    N. Moslehi Milani

Authors
  1. H. Absalan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. M. Golzan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Moslehi Milani
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to H. Absalan.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Absalan, H., Golzan, M.M. & Moslehi Milani, N. Influence of Internal Electric Field on the Spectral Characteristics of Blue GaN-Based Superluminescent Light-Emitting Diodes. Iran J Sci Technol Trans Sci 44, 1259–1268 (2020). https://doi.org/10.1007/s40995-020-00930-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s40995-020-00930-3

Keywords

Search

Navigation