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High-Rate Growth of Bicrystal ZnO Films on a Rhombohedral Sapphire Plane

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Abstract

A method for growing bicrystal ZnO films using the specific features of magnetron sputtering and the orienting effect of a rhombohedral sapphire plane is proposed. It is shown that the successive application of two deposition regimes (~2 and ~16 nm/s) leads to the formation of a bicrystal film with the (110)-oriented lower sublayer and the (002)-oriented upper sublayer. Recrystallization annealing at 1000°C for 10 h does not affect the upper (002)-oriented layer and induces stress relaxation in the lower (110)-oriented layer.

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ACKNOWLEDGMENTS

This study was performed using the equipment of the Structural Diagnostics of Materials Center for Collective Use of the Crystallography and Photonics Federal Scientific Research Center of the Russian Academy of Sciences and the Analytical Center for Collective Use of the Dagestan Federal Research Center of the Russian Academy of Sciences.

Funding

This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the framework of state orders for the Crystallography and Photonics Federal Scientific Research Center of the Russian Academy of Sciences in the part concerning the film growth and the Dagestan Federal Research Center of the Russian Academy of Sciences in the part concerning the structural analysis of the films, as well as the Russian Foundation for Basic Research, project no. 18-29-12099mk.

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Authors and Affiliations

  1. Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Scientific Research Center, Russian Academy of Sciences, 119333, Moscow, Russia

    A. E. Muslimov, A. Sh. Asvarov & V. M. Kanevsky

  2. Dagestan State University, 367000, Makhachkala, Russia

    A. M. Ismailov & V. A. Babaev

  3. Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences, 367015, Makhachkala, Russia

    A. Sh. Asvarov

Authors
  1. A. E. Muslimov
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  2. A. M. Ismailov
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  3. A. Sh. Asvarov
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  4. V. A. Babaev
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  5. V. M. Kanevsky
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Corresponding author

Correspondence to A. E. Muslimov.

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The authors declare that they have no conflict of interest.

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Translated by A. Sin’kov

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Muslimov, A.E., Ismailov, A.M., Asvarov, A.S. et al. High-Rate Growth of Bicrystal ZnO Films on a Rhombohedral Sapphire Plane. Tech. Phys. Lett. 46, 568–571 (2020). https://doi.org/10.1134/S1063785020060085

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  • DOI: https://doi.org/10.1134/S1063785020060085

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