Abstract
We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with faceted surface morphology provide a greater threading dislocation density reduction than smooth layers. The filtering effect of GaN ultrathin insertions has been confirmed.
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ACKNOWLEDGMENTS
TEM characterizations were performed using equipment of the Federal Joint Center “Material science and characterization in advanced technologies”, supported by the Ministry of Education and Science of the Russian Federation (project identifier RFMEFI62117X0018).
Funding
The study of the structural properties of AlN was supported by the Russian Foundation for Basic Research (project no. 19-29-12041mk), and the study of the growth of the epitaxial structure was supported by the Russian Science Foundation (project 19-72-30040).
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Translated by G. Dedkov
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Myasoedov, A.V., Nechaev, D.V., Ratnikov, V.V. et al. An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy. Tech. Phys. Lett. 46, 543–547 (2020). https://doi.org/10.1134/S1063785020060097
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DOI: https://doi.org/10.1134/S1063785020060097