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Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

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Abstract

A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

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ACKNOWLEDGMENTS

The authors are grateful to the Center of collective use of devices and equipment “High Technologies and Analytics of Nanosystems” at Novosibirsk State University for kindly providing instrumentation for Raman spectroscopy measurements.

Funding

This investigation was supported by a grant of the President of the Russian Federation (project no. MK-638.2019.8) in the part of In deposition and vacuum furnace annealing of samples and performed in the framework of a state contract with the Kutateladze Institute of Thermophysics SB RAS (Novosibirsk) in the part of synthesis and characterization of a-SiOx films.

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Authors and Affiliations

  1. Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. O. Zamchiy, E. A. Baranov, I. E. Merkulova & N. A. Lunev

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    A. O. Zamchiy, I. E. Merkulova & V. A. Volodin

  3. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    E. A. Maksimovskii

Authors
  1. A. O. Zamchiy
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  2. E. A. Baranov
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  3. I. E. Merkulova
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  4. N. A. Lunev
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  5. V. A. Volodin
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  6. E. A. Maksimovskii
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Corresponding author

Correspondence to A. O. Zamchiy.

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Translated by P. Pozdeev

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Zamchiy, A.O., Baranov, E., Merkulova, I.E. et al. Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. Tech. Phys. Lett. 46, 583–586 (2020). https://doi.org/10.1134/S1063785020060280

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