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The Effect of TSC and Nickel Doping on SnS Thin Films

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Abstract

Tin sulfide (SnS) thin films were obtained by chemical bath deposition (CBD) using different concentrations of trisodium citrate (TSC) as a complexing agent. Nickel doping tin sulfide was carried out. The structural, electrical, chemical composition and optical properties of thin films were analyzed. The lowest resistivity (ρ = 0.42 × 105Ω cm) is observed for Ni:SnS (6 at. %) The energy band gap values with the TSC addition are found in the range 1.36 eV–1.57 eV. The results demonstrated that tin sulfide (SnS) thin films have the potential to be used for optoelectronic applications.

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Authors and Affiliations

  1. Université de Tunis El Manar, Faculté des Sciences de Tunis, Laboratoire de Physique de la Matière Condensée, 2092, Tunis, Tunisia

    Imen Ammar & Najoua Turki-Kamoun

  2. King Khalid University, Faculty of Science, Department of Physics, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdelaziz Gassoumi

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  1. Imen Ammar
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  2. Abdelaziz Gassoumi
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  3. Najoua Turki-Kamoun
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Correspondence to Abdelaziz Gassoumi.

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Ammar, I., Gassoumi, A. & Turki-Kamoun, N. The Effect of TSC and Nickel Doping on SnS Thin Films. Silicon 13, 1933–1938 (2021). https://doi.org/10.1007/s12633-020-00589-w

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  • DOI: https://doi.org/10.1007/s12633-020-00589-w

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