Skip to main content
Log in

Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask

  • SOLID STATE ELECTRONICS
  • Published:
Technical Physics Aims and scope Submit manuscript

Abstract

We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed during simultaneous etching of SiC and the resistive mask with the edge in the shape of a sharp wedge). A simple geometrical model of etching predicts that the resultant slope of the mesastructure wall must be specified by two parameters, i.e., initial angle of the resistive wedge and the selectivity of SiC etching relative to the photoresist (ratio of etching rates of SiC and photoresist). For experiments, we used polished 4H–SiC wafers with the (0001) orientation. Photoresist regions with an edge angle of 22° were deposited using photolithography onto the Si side of the wafers. Then etching of mesastructures was performed in nitrogen trifluoride in a setup with an inductively coupled plasma. We selected RIE parameters ensuring SiC and photoresist etching with rates of 55 and 160 nm/min, respectively (etching selectivity was 1 : 3). The SiC mesastructures formed by etching have a height of 3.2 μm and gently sloping sidewalls with a slope of about 8°. This technology can be used for preparing high-voltage SiC devices with a straight bevel.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.

Similar content being viewed by others

REFERENCES

  1. A. L. Syrkin, I. V. Popov, and V. E. Chelnokov, Sov. Tech. Phys. Lett. 12, 99 (1986).

    Google Scholar 

  2. J. W. Palmour, R. F. Davis, T. M. Wallett, and K. B. Bhasin, J. Vacuum Sci. Technol. A 4, 590 (1986). https://doi.org/10.1116/1.573854

    Article  ADS  Google Scholar 

  3. W. S. Pan and A. J. Steckl, in SPP Amorphous and Crystalline Silicon Carbide, Ed. by M. M. Rahman, C. Y.-W. Yang, and G. L. Harris (Springer, Berlin, 1989), p. 217.

    Google Scholar 

  4. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, and H. Shiomi, Appl. Phys. Lett. 81, 4772 (2002). https://doi.org/10.1063/1.1529313

    Article  ADS  Google Scholar 

  5. N. D. Il’inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon’kov, and A. S. Potapov, Semiconductors 54, 144 (2020). https://doi.org/10.21883/FTP.2020.01.48783.9223

    Article  ADS  Google Scholar 

  6. N. M. Lebedeva, N. D. Il’inskaya, and P. A. Ivanov, Semiconductors 54, 258 (2020).

    Article  ADS  Google Scholar 

  7. P. A. Ivanov and I. V. Grekhov, Tech. Phys. 60, 897 (2015).

    Article  Google Scholar 

  8. P. A. Ivanov, O. I. Kon’kov, T. P. Samsonova, and A. S. Potapov, Tech. Phys. Lett. 44, 87 (2018). https://doi.org/10.1134/S1063785018020086

    Article  Google Scholar 

  9. W. M. Moreau, Semiconductor Lithography: Principles, Practices, and Materials (Plenum, New York, 1988).

    Book  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to N. M. Lebedeva.

Ethics declarations

The authors declare that they have no conflicts of interest.

Additional information

Translated by N. Wadhwa

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lebedeva, N.M., Samsonova, T.P., Il’inskaya, N.D. et al. Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask. Tech. Phys. 65, 957–960 (2020). https://doi.org/10.1134/S1063784220060195

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063784220060195

Navigation