Issue 28, 2020
From the journal:

Nanoscale

Correction: Interlayer coupling prolonged the photogenerated carrier lifetime of few layered Bi2OS2 semiconductors

Xianghong Niu, ORCID logo ab   Guangfen Wu,*c   Xiwen Zhangc  and  Jinlan Wang ORCID logo *c  

* Corresponding authors

a New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China

b National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

c School of Physics, Southeast University, Nanjing 211189, China
E-mail: jlwang@seu.edu.cn, gfwu10@gmail.com

Abstract

Correction for ‘Interlayer coupling prolonged the photogenerated carrier lifetime of few layered Bi2OS2 semiconductors’ by Xianghong Niu et al., Nanoscale, 2020, 12, 6057–6063, DOI: 10.1039/D0NR00447B.

About
Cited by
Related
Download options Please wait...

Associated articles

Article information

DOI
https://doi.org/10.1039/D0NR90147D
Article type
Correction
Submitted
23 Jun 2020
Accepted
23 Jun 2020
First published
09 Jul 2020
This article is Open Access
Creative Commons BY license

Nanoscale, 2020,12, 15495-15495

Permissions

Request permissions

Correction: Interlayer coupling prolonged the photogenerated carrier lifetime of few layered Bi2OS2 semiconductors

X. Niu, G. Wu, X. Zhang and J. Wang, Nanoscale, 2020, 12, 15495 DOI: 10.1039/D0NR90147D

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements