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Mott-Hubbard gaps and their doping-induced collapse in strongly correlated pyrochlore ruthenates

R. Kaneko, K. Ueda, C. Terakura, and Y. Tokura
Phys. Rev. B 102, 041114(R) – Published 17 July 2020

Abstract

We investigate the variation of charge dynamics in the course of the filling-control metal-insulator transitions (MITs) for pyrochlore R2Ru2O7 (R being rare-earth ions). With widely changing of R ions from Lu to Pr, the antiferromagnetic transition temperature systematically increases while the magnitude of the charge gap decreases toward zero at the hypothetical bandwidth-control Mott transition. It is attributable to the reduction of effective electron correlation in the Mott-Hubbard insulator regime. Doping holes give rise to the filling-control MITs from antiferromagnetic insulators to paramagnetic metals accompanied by the collapse of the Mott-Hubbard gaps. The doping-induced spectral weight transfer of the optical conductivity from the above-gap region to the in-gap region is nearly proportional to the doping level, whose rate is enhanced with the reduction of the electron correlation, in accord with the standard Mott criticality.

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  • Received 1 May 2020
  • Revised 2 July 2020
  • Accepted 2 July 2020

DOI:https://doi.org/10.1103/PhysRevB.102.041114

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

R. Kaneko1,2, K. Ueda1, C. Terakura2, and Y. Tokura1,2,3

  • 1Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 2RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
  • 3Tokyo College, University of Tokyo, Tokyo 113-8656, Japan

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Issue

Vol. 102, Iss. 4 — 15 July 2020

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