Abstract
Two new vertical resonant tunneling devices (RTDs) of different sizes are proposed herein to achieve negative differential resistance with enhanced tunneling and peak-to-valley ratio (PVR) stability. The proposed structures are of the form n+–p−–p+ (S2) and n+–[p−–n+]–p−–p+ (S1) with different electrodes made of parallel graphene nanoribbon and graphene sheet (S2) or bilayer graphene (S1). The results of the simulations show a PVR of 3–3.5 depending on the geometry of the structure, with a maximum current of 10 μA. Also, robust PVR values in the range of 1.2–1.5 are obtained for these structures for a wide range of dimensions. An approximate analytical model for the I–V curve under the assumption of a vertical van der Waals bonding stacked structure as equivalent to the complex horizontal channel is introduced.
Similar content being viewed by others
References
Kang, E.S., Ismail, R.: Analytical performance of 3 m and 3 m+1 armchair graphene nanoribbons under uniaxial strain. Nanoscale Res. Lett. 9, 1–8 (2014). https://doi.org/10.1186/1556-276X-9-598
Ciriminna, R., Zhang, N., Yang, M.Q., Meneguzzo, F., Xu, Y.J., Pagliaro, M.: Commercialization of graphene-based technologies: a critical insight. Chem. Commun. 51, 7090–7095 (2015). https://doi.org/10.1039/c5cc01411e
Stoller, M.D., Park, S., Zhu, Y., An, J., Ruoff, R.S., Yanwu, Z., An, J., Ruoff, R.S.: Graphene-based ultracapacitors. Nano Lett. 8, 3498–3502 (2008). https://doi.org/10.1021/nl802558y
Balandin, A.A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., Lau, C.N.: Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902–907 (2008). https://doi.org/10.1021/nl0731872
Lee, C., Wei, X., Kysar, J.W., Hone, J.: Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385–388 (2008). https://doi.org/10.1126/science.1157996
Yadav, R., Dixit, C.K.: Synthesis, characterization and prospective applications of nitrogen-doped graphene: a short review. J. Sci. Adv. Mater. Devices 2, 141–149 (2017). https://doi.org/10.1016/j.jsamd.2017.05.007
Gaskell, J., Eaves, L., Novoselov, K.S., Mishchenko, A., Geim, A.K., Fromhold, T.M., Greenaway, M.T.: Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Appl. Phys. Lett. 107, 1–5 (2015). https://doi.org/10.1063/1.4930230
Mizuta, H., Tanoue, T.: The Physics and Applications of Resonant Tunnelling Diodes. Cambridge University Press, Cambridge (1995)
Yokoyama, H., Sugiyama, H., Asada, M., Teranishi, A., Suzuki, S.: Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature. Appl. Phys. Lett. 97, 242102 (2010). https://doi.org/10.1063/1.3525834
Tian, W., Li, W., Yu, W., Liu, X.: A review on lattice defects in graphene: types, generation, effects and regulation. Micromachines 8, 163 (2017). https://doi.org/10.3390/mi8050163
Ferrari, A.C., Bonaccorso, F., Fal’ko, V., Novoselov, K.S., Roche, S., Bøggild, P., Borini, S., Koppens, F.H.L., Palermo, V., Pugno, N., Garrido, J.A., Sordan, R., Bianco, A., Ballerini, L., Prato, M., Lidorikis, E., Kivioja, J., Marinelli, C., Ryhänen, T., Morpurgo, A., Coleman, J.N., Nicolosi, V., Colombo, L., Fert, A., Garcia-Hernandez, M., Bachtold, A., Schneider, G.F., Guinea, F., Dekker, C., Barbone, M., Sun, Z., Galiotis, C., Grigorenko, A.N., Konstantatos, G., Kis, A., Katsnelson, M., Vandersypen, L., Loiseau, A., Morandi, V., Neumaier, D., Treossi, E., Pellegrini, V., Polini, M., Tredicucci, A., Williams, G.M., Hee Hong, B., Ahn, J.-H., Min Kim, J., Zirath, H., van Wees, B.J., van der Zant, H., Occhipinti, L., Di Matteo, A., Kinloch, I.A., Seyller, T., Quesnel, E., Feng, X., Teo, K., Rupesinghe, N., Hakonen, P., Neil, S.R.T., Tannock, Q., Löfwander, T., Kinaret, J.: Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 7, 4598–4810 (2015). https://doi.org/10.1039/C4NR01600A
Ferry, D.K.: The role of substrate for transport in graphene. In: IEEE Nanotechnology Materials and Devices Conference (NMDC2012), pp. 43–48 (2012)
Khoshbaten, M., Hosseini, S.E.: Design and AC modeling of a bipolar GNR-h-BN RTD with enhanced tunneling properties and high robustness to edge defects. IEEE Trans. Electron Devices 66, 3675–3682 (2019). https://doi.org/10.1109/TED.2019.2924451
Li, L., Yu, Y., Ye, G.J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X.H., Zhang, Y.: Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372 (2014)
Qiao, J., Kong, X., Hu, Z.X., Yang, F., Ji, W.: High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. (2014). https://doi.org/10.1038/ncomms5475
Xia, F., Wang, H., Jia, Y.: Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014). https://doi.org/10.1038/ncomms5458
Hong, T., Chamlagain, B., Lin, W., Chuang, H.-J., Pan, M., Zhou, Z., Xu, Y.-Q.: Polarized photocurrent response in black phosphorus field-effect transistors. Nanoscale 6, 8978–8983 (2014). https://doi.org/10.1039/c4nr02164a
Buscema, M., Groenendijk, D.J., Steele, G.A., van der Zant, H.S.J., Castellanos-Gomez, A.: Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating. Nat. Commun. 5, 4651 (2014). https://doi.org/10.1038/ncomms5651
Wu, J., Mao, N., Xie, L., Xu, H., Zhang, J.: Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem. Int. Ed. 54, 2366–2369 (2015). https://doi.org/10.1002/anie.201410108
Cai, Y., Zhang, A., Ping Feng, Y., Zhang, C.: Switching and rectification of a single light-sensitive diarylethene molecule sandwiched between graphene nanoribbons. J. Chem. Phys. (2011). https://doi.org/10.1063/1.3657435
Cai, Y., Zhang, G., Zhang, Y.W.: Layer-dependent band alignment and work function of few-layer phosphorene. Sci. Rep. 4, 1–6 (2014). https://doi.org/10.1038/srep06677
Cai, Y., Zhang, G., Zhang, Y.-W.: Electronic properties of phosphorene/graphene and phosphorene/ hexagonal boron nitride heterostructures. J. Phys. Chem. C 119, 13929–13936 (2015). https://doi.org/10.1021/acs.jpcc.5b02634
Liu, Y., Xu, F., Zhang, Z., Penev, E.S., Yakobson, B.I.: Two-dimensional mono-elemental semiconductor with electronically inactive defects: the case of phosphorus. Nano Lett. 14, 6782–6786 (2014). https://doi.org/10.1021/nl5021393
Dai, J., Zeng, X.C.: Bilayer phosphorene: effect of stacking order on bandgap and its potential applications in thin-film solar cells. J. Phys. Chem. Lett. 5, 1289–1293 (2014). https://doi.org/10.1021/jz500409m
Fei, R., Yang, L.: Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 14, 2884–2889 (2014). https://doi.org/10.1021/nl500935z
Rodin, A.S., Carvalho, A., Castro Neto, A.H.: Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. (2014). https://doi.org/10.1103/PhysRevLett.112.176801
Çakır, D., Sahin, H., Peeters, F.M.: Tuning of the electronic and optical properties of single-layer black phosphorus by strain. Phys. Rev. B 90, 205421 (2014). https://doi.org/10.1103/PhysRevB.90.205421
Peng, X., Wei, Q., Copple, A.: Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene. Phys. Rev. B 90, 85402 (2014). https://doi.org/10.1103/PhysRevB.90.085402
Padilha, J.E., Fazzio, A., da Silva, A.J.R.: van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating. Phys. Rev. Lett. 114, 66803 (2015). https://doi.org/10.1103/PhysRevLett.114.066803
Liu, X., Wood, J.D., Chen, K.-S., Cho, E., Hersam, M.C.: In situ thermal decomposition of exfoliated two-dimensional black phosphorus. J. Phys. Chem. Lett. 6, 773–778 (2015). https://doi.org/10.1021/acs.jpclett.5b00043
Island, J.O., Steele, G.A., van der Zant, H.S.J., Castellanos-Gomez, A.: Environmental instability of few-layer black phosphorus. 2D Mater. 2, 11002 (2015). https://doi.org/10.1088/2053-1583/2/1/011002
Kuntz, K.L., Wells, R.A., Hu, J., Yang, T., Dong, B., Guo, H., Woomer, A.H., Druffel, D.L., Alabanza, A., Tománek, D., Warren, S.C.: Control of surface and edge oxidation on phosphorene. ACS Appl. Mater. Interfaces 9, 9126–9135 (2017). https://doi.org/10.1021/acsami.6b16111
Cai, Y., Ke, Q., Zhang, G., Zhang, Y.-W.: Energetics, charge transfer, and magnetism of small molecules physisorbed on phosphorene. J. Phys. Chem. C 119, 3102–3110 (2015). https://doi.org/10.1021/jp510863p
Koenig, S.P., Doganov, R.A., Schmidt, H., Castro Neto, A.H., Özyilmaz, B.: Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014). https://doi.org/10.1063/1.4868132
Alva, V., Saleh, O., Lupas, A.N., Heide, L., Yang, H., Chi, N.C.N., Dallner, G., Andersson, B., Ernster, L., Appelkvist, E.L., Chojnacki, T., Dallner, G., Heide, L., Sontag, B., Muroya, A., Fukushima, N., Yazaki, K., Brandt, W., Schulze, D., Zakharova, S., Wessjohann, L., Leppik, R.A., Hamilton, J.A., Gibson, F., Boudker, O., Jin, Y., Gouaux, E., Brandt, W., Wessjohann, L.A., Noel, J.P., Richard, S.B., Keller, S., Stevenson, C.E.M., Heide, L., Lawson, D.M., Miao, Y., Wang, B., Cui, G., Poulter, C.D., Lohman, T., Janetka, J., Wang, J., Murphy, F., Ke, N., Fremont, D., Chai, J., Lohman, T.: Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 881–886 (2012)
Britnell, L., Geim, A.K., Novoselov, K.S., Gorbachev, R.V., Greenaway, M.T., Fromhold, T.M., Mishchenko, A., Eaves, L., Ponomarenko, L.A.: Resonant tunnelling and negative differential conductance in graphene transistors. Nat. Commun. 4, 1794–1795 (2013). https://doi.org/10.1038/ncomms2817
Hsu, W.T., Zhao, Z.A., Li, L.J., Chen, C.H., Chiu, M.H., Chang, P.S., Chou, Y.C., Chang, W.H.: Second harmonic generation from artificially stacked transition metal dichalcogenide twisted bilayers. ACS Nano 8, 2951–2958 (2014). https://doi.org/10.1021/nn500228r
Nourbakhsh, A., Zubair, A., Dresselhaus, M.S., Palacios, T.: Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application. Nano Lett. 16, 1359–1366 (2016). https://doi.org/10.1021/acs.nanolett.5b04791
Lin, Y.C., Ghosh, R.K., Addou, R., Lu, N., Eichfeld, S.M., Zhu, H., Li, M.Y., Peng, X., Kim, M.J., Li, L.J., Wallace, R.M., Datta, S., Robinson, J.A.: Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nat. Commun. 6, 1–6 (2015). https://doi.org/10.1038/ncomms8311
Yan, R., Fathipour, S., Han, Y., Song, B., Xiao, S., Li, M., Ma, N., Protasenko, V., Muller, D.A., Jena, D., Xing, H.G.: Esaki Diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Lett. 15, 5791–5798 (2015). https://doi.org/10.1021/acs.nanolett.5b01792
Li, M., Esseni, D., Snider, G., Jena, D., Grace Xing, H.: Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor. J. Appl. Phys. (2014). https://doi.org/10.1063/1.4866076
Feng, Z., Chen, B., Qian, S., Xu, L., Feng, L., Yu, Y., Zhang, R., Chen, J., Li, Q., Li, Q., Sun, C., Zhang, H., Liu, J., Pang, W., Zhang, D.: Chemical sensing by band modulation of a black phosphorus/molybdenum diselenide van der Waals hetero-structure. 2D Mater. 3, 1–9 (2016). https://doi.org/10.1088/2053-1583/3/3/035021
Liu, F., Shi, Q., Wang, J., Guo, H.: Device performance simulations of multilayer black phosphorus tunneling transistors. Appl. Phys. Lett. 107, 1–6 (2015). https://doi.org/10.1063/1.4935752
Ghosh, R.K., Mahapatra, S.: Monolayer transition metal dichalcogenide channel-based tunnel transistor. IEEE J. Electron Devices Soc. 1, 175–180 (2013). https://doi.org/10.1109/JEDS.2013.2292799
Szabo, A., Koester, S.J., Luisier, M.: Ab-initio simulation of van der Waals MoTe2-SnS2 heterotunneling FETs for low-power electronics. IEEE Electron Device Lett. 36, 514–516 (2015). https://doi.org/10.1109/LED.2015.2409212
Stradi, D., Martinez, U., Blom, A., Brandbyge, M., Stokbro, K.: General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green’s function. Phys. Rev. B 93, 155302 (2016)
Teong, H., Lam, K.-T., Khalid, S.B., Liang, G.: Shape effects in graphene nanoribbon resonant tunneling diodes: a computational study. J. Appl. Phys. 105, 1–6 (2009). https://doi.org/10.1063/1.3115423
Smidstrup, S., Markussen, T., Vancraeyveld, P., Wellendorff, J., Schneider, J., Gunst, T., Verstichel, B., Stradi, D., Khomyakov, P.A., Vej-Hansen, U.G., et al.: QuantumATK: an integrated platform of electronic and atomic-scale modelling tools. J. Phys. Condens. Matter 32, 15901 (2020)
Becke, A.D.: Perspective: fifty years of density-functional theory in chemical physics. J. Chem. Phys. 140, 18 (2014)
Grimme, S., Antony, J., Ehrlich, S., Krieg, H.: A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 132, 154104 (2010). https://doi.org/10.1063/1.3382344
Soler, J.M., Artacho, E., Gale, J.D., García, A., Junquera, J., Ordejón, P., Sánchez-Portal, D.: The SIESTA method for ab initio order-N materials simulation. J. Phys. Condens. Matter. 14, 2745–2779 (2002). https://doi.org/10.1088/0953-8984/14/11/302
Ryzhii, V., Ryzhii, M., Svintsov, D., Leiman, V., Maltsev, P.P., Ponomarev, D.S., Mitin, V., Shur, M.S., Otsuji, T., Ryzhii, V., Ryzhii, M., Svintsov, D., Leiman, V., Maltsev, P.P., Ponomarev, D.S.: Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: phenomenological heating model. J. Appl. Phys. 124, 114501 (2018). https://doi.org/10.1063/1.5046135
Yu, W.J., Li, Z., Zhou, H., Chen, Y., Wang, Y., Huang, Y., Duan, X.: Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246 (2012)
Moriya, R., Yamaguchi, T., Inoue, Y., Morikawa, S., Sata, Y., Masubuchi, S., Machida, T.: Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures. Appl. Phys. Lett. 105, 83119 (2014). https://doi.org/10.1063/1.4894256
Yamaguchi, T., Moriya, R., Inoue, Y., Morikawa, S., Masubuchi, S., Watanabe, K., Taniguchi, T., Machida, T.: Tunneling transport in a few monolayer-thick WS2/graphene heterojunction. Appl. Phys. Lett. 105, 223109 (2014). https://doi.org/10.1063/1.4903190
Cruz-Silva, E., Barnett, Z.M., Sumpter, B.G., Meunier, V.: Structural, magnetic, and transport properties of substitutionally doped graphene nanoribbons from first principles. Phys. Rev. B 83, 155445 (2011). https://doi.org/10.1103/PhysRevB.83.155445
Ning, F., Chen, S.-Z., Zhang, Y., Liao, G.-H., Tang, P.-Y., Li, Z.-L., Tang, L.-M.: Interfacial charge transfers and interactions drive rectifying and negative differential resistance behaviors in InAs/graphene van der Waals heterostructure. Appl. Surf. Sci. 496, 143629 (2019). https://doi.org/10.1016/j.apsusc.2019.143629
Mishchenko, A., Tu, J.S., Cao, Y., Gorbachev, R.V., Wallbank, J.R., Greenaway, M.T., Morozov, V.E., Morozov, S.V., Zhu, M.J., Wong, S.L., Withers, F., Woods, C.R., Kim, Y.J., Watanabe, K., Taniguchi, T., Vdovin, E.E., Makarovsky, O., Fromhold, T.M., Fal’ko, V.I., Geim, A.K., Eaves, L., Novoselov, K.S.: Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nat. Nanotechnol. 9, 808–813 (2014). https://doi.org/10.1038/nnano.2014.187
Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M.I., Eaves, L., Morozov, S.V., Peres, N.M.R., Leist, J., Geim, A.K., Novoselov, K.S., Ponomarenko, L.A.: Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947–950 (2012). https://doi.org/10.1126/science.1218461
Datta, S.: Quantum Transport: Atom to Transistor. Cambridge University Press, Cambridge (2005)
Ilatikhameneh, H., Salazar, R.B., Klimeck, G., Rahman, R., Appenzeller, J.: From Fowler-Nordheim to nonequilibrium green’s function modeling of tunneling. IEEE Trans. Electron Devices 63, 2871–2878 (2016). https://doi.org/10.1109/TED.2016.2565582
Lu, H., Esseni, D., Seabaugh, A.: Universal analytic model for tunnel FET circuit simulation. Solid State Electron 108, 110–117 (2015). https://doi.org/10.1016/j.sse.2014.12.002
Manavizadeh, N., Raissi, F., Soleimani, E.A., Pourfath, M., Selberherr, S.: Performance assessment of nanoscale field-effect diodes. IEEE Trans. Electron Devices 58, 2378–2384 (2011). https://doi.org/10.1109/TED.2011.2152844
Fahad, M., Srivastava, A., Sharma, A., Mayberry, C.: Analytical current transport modeling of graphene nanoribbon tunnel field-effect transistors for digital circuit design. IEEE Trans. Nanotechnol. 15, 39–50 (2016). https://doi.org/10.1109/TNANO.2015.2496158
Ryzhii, V., Otsuji, T., Ryzhii, M., Aleshkin, Y., Dubinov, A.A., Mitin, V., Shur, M.S.: Vertical electron transport in van der Waals heterostructures with graphene layers. J. Appl. Phys. 117, 154504 (2015). https://doi.org/10.1063/1.4918313
Yuan, J., Chen, Y., Xie, Y., Zhang, X., Rao, D., Guo, Y., Yan, X., Feng, Y.P., Cai, Y.: Squeezed metallic droplet with tunable Kubo gap and charge injection in transition metal dichalcogenides. Proc. Natl. Acad. Sci. U.S.A. 117, 6362–6369 (2020). https://doi.org/10.1073/pnas.1920036117
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Khoshbaten, M., Hosseini, S.E. New RTDs with enhanced operation based on black phosphorus–graphene heterostructures and a semianalytical vdW tunneling model. J Comput Electron 20, 70–80 (2021). https://doi.org/10.1007/s10825-020-01542-1
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-020-01542-1