Skip to main content
SpringerLink
Log in

Experimental investigation of influence of scratch features on GaAs cleavage plane during cleavage processing using a scratching capability index

  • Regular Paper
  • Published:
International Journal of Precision Engineering and Manufacturing-Green Technology Aims and scope Submit manuscript

Abstract

High-power semiconductor laser cavities are formed via the cleavage plane, and critically influence the reliability and performance of the laser. This paper investigates both the scratching operation and the cleavage operation to improve the quality of the cleavage plane during the entire cleavage process. The scratching capability index (SCI) variable was proposed to evaluate the scratch quality of GaAs. A series of scratching and cleavage experiments were carried out to investigate the effect of the scratch features on the GaAs cleavage plane. Experimental results of the scratching operation showed that a smaller scratching load and higher scratching speed were beneficial for reducing the kerf width and damage area width of GaAs. The cleavage operation on GaAs {100} cleavage planes exhibited crack propagation in the [1̄01̄] and [1̄00] directions and a slip direction in the <110> crystal direction. The calculated SCI variable correlated well with the scratch and cleavage qualities of GaAs, where a higher scratching SCI correlated with a smoother GaAs cleavage plane during cleavage processing. Thus, the SCI has the potential to relate the scratching parameters with the resulting cleavage plane quality of GaAs, which will help improve the manufacturing of semiconductor laser chips in the future.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13

Similar content being viewed by others

Referencess

  1. Yuan QH, Jing HQ, Zhang QY, Zhong L, Liu SP, Ma XY (2019) Development and application of GaAs-based near-infrared high power semiconductor lasers. Laser Optoelectron Progress 56(4):35–48

    Google Scholar 

  2. Fomin E, Bondarev A, Slipchenko S, Rudova N, Pikhtin N (2019) Surface features of the AlN optical coating deposited on the facet of a high-power AlGaAs/GaAs semiconductor laser. J Phys 1400(5):055029

    Google Scholar 

  3. Jiang C, Wu T, Ye H, Cheng JY, Hao Y (2019) Estimation of energy and time savings in optical glass manufacturing when using ultrasonic vibration-assisted grinding. J Precis Eng Manufact-Green Technol 6(1):1–9

    Article  Google Scholar 

  4. Ding ZS, Sun GX, Guo MX, Jiang XH, Li BZ et al (2020) Effect of phase transition on micro-grinding-induced residual stress. J Mater Process Technol 281:116647

    Article  Google Scholar 

  5. Jiang C, Huang JL, Jiang ZY, Qian DB, Hong XL (2019) Estimation of energy savings when adopting ultrasonic vibration-assisted magnetic compound fluid polishing. J Precis Eng Manufact-Green Technol. https://doi.org/10.1007/s40684-019-00167-5

    Article  Google Scholar 

  6. Park C, Kim H, Cho H, Lee T, Kim D, Lee S et al (2019) Effect of relative surface charge of colloidal silica and sapphire on removal rate in chemical mechanical polishing. J Precis Eng Manufact-Green Technol 6(2):339–347

    Article  Google Scholar 

  7. Eunseok O, Lim S (2019) Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile. J Ind Eng Chem 77:230–237

    Article  Google Scholar 

  8. Wasmer K, Ballif C, Gassilloud R, Pouvreau C, Rabe R, Michler J et al (2005) Cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale. Adv Eng Mater 7(5):309–317

    Article  Google Scholar 

  9. Xu JY, Hu H, Zhuang CH, Ma GD, Han JL, Lei YL (2018) Controllable laser thermal cleavage of sapphire wafers. Opt Lasers Eng 102:26–33

    Article  Google Scholar 

  10. Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J (2008) Dicing of gallium-arsenide high performance laser diodes for industrial applications Part I. Scratching operation. J Mater Process Technol 198(1–3):114–121

    Article  Google Scholar 

  11. Wasmer K, Parlinska-Wojtan M, Graça S, Michler J (2013) Sequence of deformation and cracking behaviours of Galliume Arsenide during nano-scratching. Mater Chem Phys 138:38–48

    Article  Google Scholar 

  12. Pouvreau C, Wasmer K, Hessler-Wyser H, Ganiere JD, Breguet JM, Michler J et al (2013) Nanoindentation cracking in gallium arsenide: Part II. TEM investigation. J Mater Res 28(20):2799–2809

    Article  Google Scholar 

  13. Shen ZX, Chen RF, Dai LG, Zhu R, Zhang XL (2010) Effcts of temperatureon micro-hardness and crack initiation and expansion of single crystal gallium arsenide tested by indentation technique. J Chin Ceramic Soc 38(5):892–896

    Google Scholar 

  14. Sweet CA, Schulte KL, Simon JD, Steiner MA, Jain N, Young DL (2016) Controlled exfoliation of (100) GaAs-based devices by spalling fracture. Appl Phys Lett 108(1):011906

    Article  Google Scholar 

  15. Liu W, Zhang SK, Stutzman M, Poelker M (2016) Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. Phys Rev Accelerat Beams 19(10):103402

    Article  Google Scholar 

  16. Okui T, Hasegawa S, Fukutome H, Nakashima H (2000) Shearing orientation dependence of cleavage step structures on GaAs (110). Surf Sci 448(2000):219–224

    Article  Google Scholar 

  17. Hess P (2014) Strength of semiconductors, metals, and ceramics evaluated by a microscopic cleavage model with Morse-type and Lennard-Jones-type interaction. J Appl Phys 116(5):053515

    Article  Google Scholar 

  18. Wasmer K, Ballif C, Pouvreau C, Schulz D, Michler J (2008) Dicing of gallium-arsenide high performance laser diodes for industrial applications Part II. Cleavage operation. J Mater Process Technol 198(1–3):105–113

    Article  Google Scholar 

  19. Liu QY, Zhou J, Bao JD, Zhao YW, Xiong LC, Shi TL et al (2019) A semi-empirical fracture model for silicon cleavage fracture and its molecular dynamics study. Theoret Appl Fract Mech 100:86–92

    Article  Google Scholar 

  20. Fabijanic TA, Coric D, Musa MS, Sakoman M (2017) Vickers indentation fracture toughness of near-nano and nanostructured WC-Co cemented carbides. Metals 7(4):143

    Article  Google Scholar 

  21. Sun TJ, Chen YF, Cheng JC, Chiu CL (2018) Optimizing the dicing saw parameters of 60 μm wafer dicing street. Microsyst Technol 24(10):3965–3971

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by National Natural Science Foundation of China (51475310).

Author information

Authors and Affiliations

  1. College of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China

    Rui Gao, Chen Jiang, KangJia Dong & FuRong Li

  2. Shanghai Nanpre Mechanics Co., Ltd, Shanghai, 201203, China

    XiaoHu Lang

Authors
  1. Rui Gao
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chen Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. XiaoHu Lang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. KangJia Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. FuRong Li
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Chen Jiang.

Ethics declarations

Conflict of interests

On behalf of all authors, the corresponding author states that there is no conflict of interest.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gao, R., Jiang, C., Lang, X. et al. Experimental investigation of influence of scratch features on GaAs cleavage plane during cleavage processing using a scratching capability index. Int. J. of Precis. Eng. and Manuf.-Green Tech. 8, 761–770 (2021). https://doi.org/10.1007/s40684-020-00241-3

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s40684-020-00241-3

Keywords

Search

Navigation