Floquet engineering of the Luttinger Hamiltonian

O. V. Kibis, M. V. Boev, V. M. Kovalev, and I. A. Shelykh
Phys. Rev. B 102, 035301 – Published 1 July 2020

Abstract

Within the Floquet theory of periodically driven quantum systems, we developed the theory of light-induced modification of electronic states in semiconductor materials described by the Luttinger Hamiltonian (the electronic term Γ8). Particularly, exact solutions of the Floquet problem are found for the band edge in the cases of linearly and circularly polarized irradiation. It is shown that the irradiation changes electron effective masses near the band edge, induces anisotropy of the electron dispersion, and splits the bands. It is demonstrated that the light-induced band splitting strongly depends on the light polarization. Namely, the circularly polarized light acts similarly to a stationary magnetic field and lifts the spin degeneracy of electron branches, whereas a linearly polarized light does not affect the spin degeneracy and only splits the bands in the center of the Brillouin zone. The present theory can be applied to describe electronic properties of various semiconductor structures irradiated by an electromagnetic field in the broad frequency range.

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  • Received 9 February 2020
  • Accepted 16 June 2020

DOI:https://doi.org/10.1103/PhysRevB.102.035301

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. V. Kibis1,*, M. V. Boev1, V. M. Kovalev1, and I. A. Shelykh2,3

  • 1Department of Applied and Theoretical Physics, Novosibirsk State Technical University, Karl Marx Avenue 20, Novosibirsk 630073, Russia
  • 2Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland
  • 3Department of Physics and Engineering, ITMO University, Saint Petersburg 197101, Russia

  • *Oleg.Kibis@nstu.ru

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Issue

Vol. 102, Iss. 3 — 15 July 2020

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