Abstract
For achieving a highly selective polishing rate between a tungsten (W) film and a silicon-dioxide (SiO2) film in W chemical-mechanical planarization (CMP), we designed W-film CMP slurry by mixing a small-molecule having two carboxylic functional groups (i.e., malic acid) as a selectivity agent. The selectivity was principally controlled by the malic acid concentration: it rapidly increased with increasing malic acid concentration in the W-film CMP slurry, and a W-film polishing rate:SiO2-film polishing rate of >100:1 was achieved. We found that the selectivity was mainly determined by the chemical properties, such as the corrosion and the chemical reaction between the films and malic acid rather than by the mechanical property, i.e., the electrostatic force between the ZrO2 abrasive and the films.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. Tamboli, S. Seal and V. Desai, J. Vac. Sci. Technol. A 17, 1168 (1999).
G. Lim et al., Wear 257, 863 (2004).
Y. J. Seo, N. H. Kim and W. S. Lee, Mater. Lett. 60, 1192 (2006).
H. van Kranenburg, H. D. van Corbach, P. H. Woerlee and M. Lohmeier, Microelectron. Eng. 33, 241 (1997).
C. H. Kim et al., in Proceedings of the 2011 IEEE/ITC/MAM (Interconnect Technology Conference and Materials for Advanced Metallization) (Dresden, Germany, May 8-12, 2011).
S. Ojima et al., in PacRim-CMP (Tokyo, Japan, December 6, 2004), p. 234.
J. H. Lim, J. H. Park and J. G. Park, Appl. Surf. Sci. 282, 512 (2013).
G. Lim et al., J. Electrochem. Soc. 153, B169 (2006).
M. K. Poddar et al., J. Mater. Sci. 55, 3450 (2020).
J. H. Lim, J. H. Park and J. G. Park, J. Electrochem. Soc. 159, H363 (2012).
H. Kim et al., J. Electrochem. Soc. 151, G858 (2004).
Y. J. Seo and W. S. Lee, Mater. Sci. Eng. B 118, 281 (2005).
D. Stein, D. L. Hetherington and J. L. Cecchia, J. Electrochem. Soc. 146, 376 (1999).
E. B. Seo et al., ECS J. Solid State Sci. Technol. 9, 054001 (2020).
W. D. Johnston, J. Am. Ceram. Soc. 47, 198 (1964).
R. A. Marcus, J. Chem. Phys. 26, 867 (1957).
D. E. Carter, Environ. Health Perspect. 103 (Suppl. 1), 17 (1995).
B. Suryadevara, Advances in chemical mechanical planarization (CMP) (Woodhead Publishing, Sawston, 2016), Vol. 1, Chap. 6, p. 138.
Acknowledgments
This work was supported by the Republic of Korea's MOTIE (Ministry of Trade, Industry and Energy) (10085643) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices, and by the Brain Korea 21 PLUS Program.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Seo, EB., Park, JG., Bae, JY. et al. Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization. J. Korean Phys. Soc. 76, 1127–1132 (2020). https://doi.org/10.3938/jkps.76.1127
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.76.1127