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Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction

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Abstract

A strained Ge1−x−ySixSny/Ge1−a−bSiaSnb direct type II staggered heterojunction n-channel tunneling field-effect transistor (FET) with a dual-material double gate is proposed herein. A high-K gate dielectric is used to improve the overall device performance. The energy bandgap for strained Ge1−x−ySixSny grown on a relaxed Ge1−a−bSiaSnb layer is determined using the generalized approach of Menendez and Kouvetakis (MK). Poisson’s equation is solved by using a parabolic approximation to determine the surface potential and electric field. The drain current is calculated using the tunneling generation rate obtained from Kane’s model. A significant improvement of the drain current is observed as compared with that of previously reported Si-based TFETs.

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Acknowledgements

The authors thank Prof. Sudakshina Kundu, Ex- Professor, Maulana Abul Kalam Azad University of Technology, West Bengal and Dr. Anirban Bhattacharyya, Assistant Professor, Institute of Radio Physics and Electronics, University of Calcutta for providing insight and expertise that greatly helped in the research.

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  1. Institute of Radio Physics and Electronics, University of Calcutta, 92, A.P.C Road, Kolkata, West Bengal, 700009, India

    Namrata Shaw, Bratati Mukhopadhyay & Gopa Sen

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  1. Namrata Shaw
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Shaw, N., Mukhopadhyay, B. & Sen, G. Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction. J Comput Electron 19, 1433–1443 (2020). https://doi.org/10.1007/s10825-020-01540-3

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