Epitaxial growth and structure of LaVO3 and PrVO3 thin films

G. Masset, O. Copie, J. Ghanbaja, K. Dumesnil, L. Pasquier, D. Pierre, and S. Andrieu
Phys. Rev. Materials 4, 064417 – Published 22 June 2020
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Abstract

We report on the epitaxial growth of PrVO3 and LaVO3 by molecular beam epitaxy on (001)-oriented SrTiO3 substrates. We show that a high control of the deposition is achieved and leads to a highly reproducible layer-by-layer growth mode. We evidence also the effect of epitaxial strain on the magnetic properties of the epitaxial films. High-resolution transmission electron microscopy and scanning transmission electron microscopy observations reveal that an antipolar motion of the rare-earth atoms exists in both LaVO3 and PrVO3 thin films. The investigation of the structural distortions and atomic displacements in the vanadate thin films may be generalized to other orthorhombic perovskite oxides and contributes to the search of ferroelectricity by design in symmetry-breaking magnetic oxide superlattices.

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  • Received 13 January 2020
  • Revised 6 May 2020
  • Accepted 29 May 2020
  • Corrected 25 February 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.4.064417

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

25 February 2021

Correction: The inline equation for the tolerance factor in the first paragraph of Sec. 1 contained an error and has been fixed.

Authors & Affiliations

G. Masset, O. Copie*, J. Ghanbaja, K. Dumesnil, L. Pasquier, D. Pierre, and S. Andrieu

  • Institut Jean Lamour, CNRS/Université de Lorraine (UMR 7198), F-54000 Nancy, France

  • *olivier.copie@univ-lorraine.fr

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Issue

Vol. 4, Iss. 6 — June 2020

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