Single walled carbon nanotube incorporated Titanium dioxide and Poly(3-hexylthiophene) as electron and hole transport materials for perovskite solar cells
Graphical abstract
Introduction
Perovskite solar cells (PSCs) have become a research hot-spot due to its low-cost fabrication techniques together with high efficiency [1], [2]. It has a perovskite layer sandwiched between an electron and hole transporting layer with transparent conducting oxide and gold thin films as the electrodes. Both electron and hole transporting layers play a vital role in charge transport in these PSCs. Optimizing the charge transport properties in these transporting layers is one of the strategies to improve the PCE of PSCs [3]. In recent years, a few works have been focused on the application of CNT in PSCs due to their outstanding electrical, optical, mechanical, and structural properties [4].
In conventional PSCs, TiO2 is regarded as one of the best electron extracting and transporting material. It was reported that the charge transfer at the interface was significantly improved after introducing CNT in Electron Transporting Materials (ETM), which effectively increases the electron collection [5]. P3HT is one of the best studied Hole Transporting Material (HTMs) for PSCs. However, the hole-mobility is the key challenge in enhancing the efficiency of PSCs.
In this study, we focus on enhancing the performance of PSCs by utilizing CNTs (i) at TiO2/perovskite interface, (ii) in P3HT HTM, and (iii) in both TiO2/perovskite interface and P3HT HTM, and to the best of our knowledge this is the first study reporting all these effects together in PSCs.
Section snippets
Materials and methods
The device fabrication and characterization techniques of PSCs with and without CNT can be found in the supporting information (SI) and refs. [6], [7].
Results and discussion
In this study, CNT bundles (IsoNanotubes S-99, NanoIntegris, Canada) which are predominantly p-type semiconductors after sonication [8], [9] were incorporated at the TiO2/CH3NH3PbIxCl3-x interface and/or P3HT. Fig. 1(a) shows the Raman spectra of bare TiO2 and CNT dip-coated TiO2 electrodes, recorded using Raman spectrometer (EZRAMAN, Model: 5B1S-162) with a 532 nm laser. The peaks obtained at the wavenumbers of 1124 and 1407 cm−1 corresponding to D-band and G-band, respectively confirm the
Conclusion
In this work, the impact of the incorporation of CNT at TiO2/perovskite interface, in P3HT, and in both TiO2/perovskite interface and in P3HT has been studied. The best performance was achieved when CNT was incorporated in both TiO2/perovskite interface and P3HT, and above 50% enhancement in PCE was recorded compared to control device fabricated without incorporating CNT. Notably, all CNT incorporated PSCs exhibited higher FF, and it can be explained by the passivation of charge recombination.
Declaration of Competing Interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Acknowledgement
Authors acknowledge CBERC (LKA-3182-HRNCET), HRNCET (NORPART/2016/10237) projects and Ministry of Science Technology and Research, Sri Lanka for providing financial support.
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