Abstract
We propose a method of signal amplification for the scanning probe microscope mode, in which the distribution of the surface potential of a sample is measured simultaneously with topography using a local probe based on a field-effect transistor with a nanowire channel. The application of a method is especially relevant in the study of the electric potential of the surface in the case when it is covered with a dielectric layer that strongly weakens the electric field of the detected electric charges. A key feature of the method is in additional coating the surface of the dielectric layer with thin film of chromium (\(R_{\textrm{square}}>10\) k\(\Omega\); a film thickness is \({\sim}7\) nm). This film consists of small conductive granules separated by tunnel barriers. It was experimentally shown on the fabricated test structures that a signal attenuated by a dielectric layer can be restored by \(70{-}80\%\). We estimated the sensitivity of transistors integrated into the probe of a scanning probe microscope in the range of \(2{-}5\) mV in single frequency band at a frequency of \(100\) Hz.
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ACKNOWLEDGMENTS
Bozev I. V. thanks the BASIS Foundation for the Advancement of Theoretical Physics and Mathematics.
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This work was supported by the Russian Science Foundation (project no. 16-12-00072).
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Translated by I. P Obrezanova
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Bozhev, I.V., Trifonov, A.S., Presnov, D.E. et al. A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer. Moscow Univ. Phys. 75, 70–75 (2020). https://doi.org/10.3103/S0027134920010063
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DOI: https://doi.org/10.3103/S0027134920010063