Corrigendum to “A significant enhancement in visible-light photodetection properties of chemical spray pyrolysis fabricated CdS thin films by novel Eu doping concentrations by Shkir et al.,” [Sens. Actuators A 301 (2020) 111749]

doi:10.1016/j.sna.2020.112169

Sensors and Actuators A: Physical

Volume 313, 1 October 2020, 112169

https://doi.org/10.1016/j.sna.2020.112169 Get rights and content

Abstract

The authors regret that when the above paper was published Eq. (7) was incorrect [1]. It is now been reproduced correctly below. The authors would like to apologise for any inconvenience caused.

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Declaration of Competing Interest

The authors declare that there is no conflict of interest to declare.

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A comprehensive experimental investigation of La@CdS nanostructured thin films: Structural, opto-nonlinear and photodetection properties
2021, Surfaces and Interfaces
Citation Excerpt :
A significant improvement can be seen for the 5.0 wt. % La doped films as compared to the pure CdS films which has also been reported elsewhere [54]. Y. Ye et al. have reported a comparable rise and decay times of a single CdS nano belt-based photodetector device [55].
Device grade La@CdS nanostructured thin films with hexagonal wurtzite structure were fabricated on glass substrates with 0 wt.%, 1.0 wt.%, 3.0 wt.% and 5.0 wt.% La doping concentrations by spray pyrolysis method. Comprehensive experimental investigations were systematically carried out on the prepared films. The obtained results revealed that the grown films demonstrate excellent opto-nonlinear and visible light photo-detection properties. The optical band gap values of the films were obtained using absorbance spectroscopy and were in the range 2.40–2.42 eV. On the other hand, the third order nonlinear optical susceptibility (χ⁽³⁾) values of the films were calculated and were found to be between 2.73 × 10⁻¹³–1.36 × 10⁻¹⁰ esu and were remarkably enhanced after La doping. The dark and photo currents were recorded as functions of La doping concentrations and the intensity of the light source as well. La@CdS based devices photodetection parameters like, responsivity, photosensitivity, external quantum efficiency and specific detectivity values were also obtained in the range of 0.101–1.02 A/W, 22–215, 22.97–241.0% and 8.98 × 10¹⁰–4.17 × 10¹¹ Jones, respectively. The rise and decay times were also considerably improved after the incorporation of La in the CdS matrix.

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