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Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/FeNiCo/CoFe/Cu/CoFe/FeNiCo/FeMn/Ta nanostructure formed on an oxidized silicon substrate. The effect mechanical deformation has on the electrophysical parameters of the nanostructure is investigated. Conclusions and prospects for using magnetoresistive nanostructures with a magnetostrictive effect in elements of magnetic straintronics are formulated.

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ACKNOWLEDGMENTS

The properties of nanostructures were investigated on equipment at Scientific and Production Complex Tekhnologichesnkii Tsentr’s shared resource center Functional Control and Diagnostics of Micro- and Nanosystem Technologies.

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Authors and Affiliations

  1. Scientific and Production Complex Tekhnologicheskii Tsentr, 124498, Moscow, Russia

    D. A. Zhukov, A. I. Krikunov, V. V. Amelichev & D. V. Kostyuk

  2. Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, 117997, Moscow, Russia

    S. I. Kasatkin

Authors
  1. D. A. Zhukov
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  2. A. I. Krikunov
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  3. V. V. Amelichev
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  4. D. V. Kostyuk
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  5. S. I. Kasatkin
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Corresponding author

Correspondence to D. A. Zhukov.

Additional information

Translated by S. Efimov

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Zhukov, D.A., Krikunov, A.I., Amelichev, V.V. et al. Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices. Bull. Russ. Acad. Sci. Phys. 84, 602–604 (2020). https://doi.org/10.3103/S1062873820050391

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  • DOI: https://doi.org/10.3103/S1062873820050391

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