Abstract
We present the results of diffraction studies and the electromagnetic (EM) field distribution in a microsphere of vanadium dioxide (VO2) before and after the metal–semiconductor phase transition (MSPT) is presented. As a result of the calculations, it has been shown that after the phase transition point in VO2 (T > Tc), the EM wave field practically does not pass into the microsphere, almost completely reflecting from it and scattering, which is associated with a sharp increase in the imaginary part of the dielectric constant of the microsphere, the VO2 transition into metallic state and commensurability of the EM wavelength with the radius of microsphere. Тhe radiation intensity has been found to decrease abruptly at a distance 2R from the surface of microsphere, which is associated with the interference of waves behind the microsphere (shadow region). The simulation of the diffraction and distribution of the EM field inside and outside microsphere allows us to propose a new method for studying phase transitions of the MSPT type.
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Funding
The work was supported by the Russian Foundation for Basic Research (projects nos. 17-57-150001, 19-07-00246, 17-57-560002, 20-37-70038, and the Government of the Russian Federation (Resolution no. 211 of March 16, 2013), agreement no. 02. A03.21.0011.
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Bychkov, I.V., Kuzmin, D.A., Tolkachev, V.A. et al. Diffraction of a Plane Electromagnetic Wave by a VO2 Microsphere in the Phase Transition Region. Phys. Solid State 62, 993–997 (2020). https://doi.org/10.1134/S1063783420060050
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DOI: https://doi.org/10.1134/S1063783420060050