Abstract
The effects of Ca atoms adsorbed on the C-incorporated Si(001)-4°-off substrate have been investigated by using scanning tunneling microscopy (STM) and synchrotron photoemission spectroscopy (PES). The C atoms incorporated into the subsurface by C2H2 exposure and postannealing at 630 °C induce the c(4 × 4) structure and debunch the double-layer DB steps. The Ca atoms additionally adsorbed on this C-incorporated substrate induce terraces with a width twice that of the clean surface. Until postannealing up to 680 °C, no SiC trace is detected. The SiC islands start to be detected after postannealing at 780 °C, which is about 100 °C higher than that for the identical surface without Ca atoms. After the adsorbed Ca atoms are mostly desorbed by 880 °C postannealing, the SiC islands only remain on the surface. Such a result implies that the adsorbed Ca atoms act as a stabilizer to the subsurface C atoms and increase the onset temperature of SiC formation by 100 °C.
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Acknowledgments
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education (No. NRF-2016R1D1A1B03934192). H.K. was also supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education (No. NRF-2017R1D1A1A09000612).
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Kim, H., Tuvdendorj, B., Tsogtbaatar, N. et al. Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate. J. Korean Phys. Soc. 76, 991–1000 (2020). https://doi.org/10.3938/jkps.76.991
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DOI: https://doi.org/10.3938/jkps.76.991