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Study of the Electrophysical Properties of Colloidal Indium Antimonide Quantum Dots

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Abstract

The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into account has been studied. The positions of the first three levels of their electronic spectrum have been estimated. It has been demonstrated that the mechanism of the observed field emission from a film structure of colloidal indium antimonide QDs is characterized adequately by the Morgulis–Stratton theory in the range of electric-field intensities corresponding to the experimental conditions.

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 19-07-00087.

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Authors and Affiliations

  1. Chernyshevsky Saratov State University, 410012, Saratov, Russia

    A. I. Mikhailov, V. F. Kabanov & M. V. Gavrikov

Authors
  1. A. I. Mikhailov
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  2. V. F. Kabanov
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  3. M. V. Gavrikov
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Correspondence to M. V. Gavrikov.

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The authors declare that they have no conflict of interest.

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Translated by D. Safin

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Mikhailov, A.I., Kabanov, V.F. & Gavrikov, M.V. Study of the Electrophysical Properties of Colloidal Indium Antimonide Quantum Dots. Tech. Phys. Lett. 46, 339–341 (2020). https://doi.org/10.1134/S1063785020040100

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  • DOI: https://doi.org/10.1134/S1063785020040100

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