Abstract
Silicon light-emitting diodes with luminescence associated with (113) defects are fabricated by the implantation of 350-keV oxygen ions at a dose of 3.7 × 1014 cm–2 and subsequent annealing at 700°C for 1 h in a chlorine-containing atmosphere. The electroluminescence is studied in wide temperature and excitation-power ranges. The line associated with the (113) defects is dominant in all the spectra. The temperature dependence of the line intensity depends on the excitation power at low temperatures: an increase in the intensity with an activation energy of 25 meV is observed at low current densities and no rise in the intensity is observed with increasing current density. At higher temperatures, an intensity with an activation energy of 59 meV is quenched irrespective of the current density. With increasing temperature, the peak of the line of the (113) defect shifts by the same energy as the energy-gap width, whereas the half width of the line grows linearly.
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Translated by M. Tagirdzhanov
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Kalyadin, A.E., Shtel’makh, K.F., Aruev, P.N. et al. Silicon Light-Emitting Diodes with Luminescence from (113) Defects. Semiconductors 54, 687–690 (2020). https://doi.org/10.1134/S1063782620060081
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DOI: https://doi.org/10.1134/S1063782620060081