Abstract
The measured electrical parameters of silicon pin photodiodes subjected to the implantation of defect-forming ions and subsequent heat treatment are analyzed, which reveal a new way of reducing the dark current and enhancing the device yield. The data of the electrical measurements are compared with the results of the structural study. The experimental efficiency of proton irradiation of the n+–p junction periphery for protecting the surface of high-resistance silicon-based pin photodiodes is experimentally established. The optimal proton irradiation and subsequent annealing regimes (an energy of E = 100 + 200 + 300 keV, a dose of D = 2 × 1016 cm–2, a temperature of T = 300°C, and a time of t = 2 h) are determined, which ensure the formation of a surface layer with characteristics optimal for obtaining the minimum dark currents of photosensitive areas and a guard ring. The use of these regimes in commercial pin photodiodes with an n+–p junction depth of ~3 μm has allowed a reduction in the dark current by an order of magnitude and an increase in the device yield.
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REFERENCES
I. P. Bezrodnykh, A. P. Tyutnev, and V. T. Semenov, Radiation Effects in Space. The Effect of Ionizing Radiation on Electronic Products (VNIIEM, Moscow, 2017), Part 3 [in Russian].
M. Bruel, Electron. Lett. 31, 1201 (1995).
V. V. Kozlovskii, Modification of Semiconductors by Proton Beams (Nauka, St. Petersburg, 2003) [in Russian].
V. Gubarev, A. Semenov, A. Surma, and V. Stolbunov, Silov. Elektron., No. 5, 108 (2011).
S. Kirnstötter, M. Faccinelli, M. Jelinek, W. Schustereder, J. G. Laven, H. J. Schulze, and P. Hadley, Solid State Phenom. 205–206, 311 (2014).
I. G. D’yachkova, E. G. Novoselova, and I. S. Smirnov, in Proceedings of the 25th International Conference on Radiation Physics of Solid State (Sevastopol’, 2015), p. 539.
H. Schmalzwasser and A. Richter, Wissensch. Zeitschr. Friedrich-Schiller-Univ. (Jena) 35, 505 (1986).
P. Wendland, Opt. Spectra 7 (10), 33 (1973).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
Semiconductor Surface Physics, Collection of Articles (Inostr. Liter., Moscow, 1959) [in Russian].
P. Wendland, Electro-Opt. Syst. Des. 8, 48 (1970).
B. M. Vul, Physics of Dielectrics and Semiconductors (Nauka, Moscow, 1988) [in Russian].
P. A. Aleksandrov, E. K. Baranova, I. V. Baranova, V. V. Budaragin, and V. L. Litvinov, in Proceedings of the 12th International Conference on Radiation Physics of Solid State (Sevastopol’, 2002), p. 149.
A. F. Burenkov, Tables of Spatial Distribution Parameters of Ion-Implanted Impurities (BGU, Minsk, 1980) [in Russian].
V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov, F. N. Chukhovskii, and L. M. Sorokin, Phys. Solid State 61, 1383 (2019).
V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov, F. N. Chukhovskii, and L. M. Sorokin, Phys. Solid State 61, 1707 (2019).
V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov, Yu. S. Krivonosov, V. T. Bublik, and A. I. Shikhov, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekhn. 22 (1), 11 (2019).
ACKNOWLEDGMENTS
We are grateful to Dr. Sc. (Phys.-Math.) L.M. Sorokin, Ioffe Physical–Technical Institute, for assistance in electron-microscopy investigations and Cand. Tech. Sc. K.V. Sorokin, Moscow State University of Fine Chemical Technologies, for help in obtaining the electrical characteristics of the investigated samples.
Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the state assignment for the Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences.
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Translated by E. Bondareva
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Asadchikov, V.E., Dyachkova, I.G., Zolotov, D.A. et al. Correcting the Characteristics of Silicon Photodiodes by Ion Implantation. Semiconductors 54, 666–671 (2020). https://doi.org/10.1134/S1063782620060032
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DOI: https://doi.org/10.1134/S1063782620060032