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Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

  • AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS
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Abstract

The polarization processes in thin layers of amorphous molybdenum disulfide MoS2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies Ea and Eσ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.

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Funding

This study was supported by the Russian Foundation for Basic Research (project no. 19-07-00353A).

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Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, 191186, St. Petersburg, Russia

    A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, N. I. Anisimova & A. V. Kolobov

  2. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Ibaraki, Japan

    Y. Saito, P. Fons & A. V. Kolobov

Authors
  1. A. A. Kononov
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  2. R. A. Castro-Arata
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  3. D. D. Glavnaya
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  4. V. M. Stozharov
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  5. D. M. Dolginsev
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  6. Y. Saito
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  7. P. Fons
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  8. N. I. Anisimova
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  9. A. V. Kolobov
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Corresponding author

Correspondence to A. A. Kononov.

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The authors declare no conflict of interest.

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Translated by M. Skorikov

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Kononov, A.A., Castro-Arata, R.A., Glavnaya, D.D. et al. Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering. Semiconductors 54, 558–562 (2020). https://doi.org/10.1134/S1063782620050073

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  • DOI: https://doi.org/10.1134/S1063782620050073

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