Skip to main content
SpringerLink
Log in

Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped zinc oxide (ZnO:Ga)|cuprous oxide (Cu2O) thin film hetero-junction. The deposition parameters were constant for ZnO:Ga and Cu2O. Structural and optical properties of ZnO:Ga, Cu2O, and ZnO:Ga|Cu2O hetero-junction were characterized by X-Ray Diffraction method and UV–Vis spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Keithley I–V source meter. The ZnO:Ga|Cu2O hetero-junction was annealed at 350, 400, and 450°C and the current-voltage characteristics were measured. The band gaps of ZnO, Cu2O, and ZnO:Ga|Cu2O are ~3.27, ~2.65, and ~3.29 eV, respectively. The annealing temperature improves the hetero-junction quality.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.

Similar content being viewed by others

REFERENCES

  1. H. Hosono and K. Ueda, in Springer Handbook of Electronic and Photonic Materials, Ed. by S. Kasap and P. Capper (Springer, Cham, 2017).

    Google Scholar 

  2. Y. Chen, IOP Conf. Ser.: Mater. Sci. Eng. 423, 012170 (2018).

  3. Y. S. Kim, W. J. Hwang, K. T. Eun, and S. H. Choa, Appl. Surf. Sci. 257, 8134 (2011).

    Article  ADS  Google Scholar 

  4. J. W. Park, G. H. Lee, Y. Y. Kwon, K. W. Park, J. Lee, Y. W. Jin, Y. C. Nah, and H. Kim, Org. Electron. 15, 2178 (2014).

    Article  Google Scholar 

  5. S. Faÿ, J. Steinhauser, N. Oliveira, E. Vallat-Sauvain, and C. Ballif, Thin Solid Films 515, 8558 (2007).

    Article  ADS  Google Scholar 

  6. M. Schüler, T. Sauerwald, and A. Schütze, J. Sens. Syst. 3, 213 (2014).

    Article  Google Scholar 

  7. J. Dsy and N. P. Ta, J. Mater. Chem. Eng. 1, 1004 (2018).

    Google Scholar 

  8. H. Hagendorfer, K. Lienau, and S. Nishiwaki, Adv. Mater. 26, 632 (2014).

    Article  Google Scholar 

  9. H. Wei, M. Li, Z. Ye, Z. Yang, and Y. Zhang, Mater. Lett. 65, 427 (2011).

    Article  Google Scholar 

  10. C. Y. Tsay, K. S. Fan, and C. M. Lei, J. Alloys Compd. 512, 216 (2012).

    Article  Google Scholar 

  11. H. Fujiwara and M. Kondo, Phys. Rev. B 71, 7 (2005).

    Google Scholar 

  12. J. H. Park, K. J. Ahn, S. I. Na, and H. K. Kim, Sol. Energ. Mater. Sol. Cells 95, 657 (2011).

    Article  Google Scholar 

  13. R. Parthiban, D. Balamurugan, and B. G. Jeyaprakash, Mater. Sci. Semicon. Proc. 31, 471 (2015).

    Article  Google Scholar 

  14. P. K. Nayak, J. Yang, J. Kim, S. Chung, J. Jeong, Ch. Lee, and Y. Hong, J. Phys. D: Appl. Phys. 42, 139801 (2009).

    Article  ADS  Google Scholar 

  15. Y. S. Zou, S. L. Wang, H. Yang, K. Wang, and S. Hui, Surf. Eng. 31, 302 (2014).

    Article  Google Scholar 

  16. H. Asahara, D. Takamizu, A. Inokuchi, M. Hirayama, A. Teramoto, S. Saito, M. Takahashi, and T. Ohmi, Thin Solid Films 518, 2953 (2010).

    Article  ADS  Google Scholar 

  17. J. M. Mochel, US Patent No. 2564707 (1951).

  18. J. E. Hill and R. R. Chamberlin, US Patent No. 3148084 (1964).

  19. M. Izaki, T. Shinagawa, K.-T. Mizuno, Y. Ida, M. Inaba, and A. Tasaka, J. Phys. D: Appl. Phys. 40, 3326 (2007).

    Article  ADS  Google Scholar 

  20. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961).

    Article  ADS  Google Scholar 

  21. T. Kosugi and S. Kaneko, J. Am. Ceram. Soc. 81, 3117 (1998).

    Article  Google Scholar 

  22. P. Pattanasattayavong, S. Thomas, G. Adamopoulos, M. A. McLachlan, and T. D. Anthopoulos, Appl. Phys. Lett. 102, 163505 (2013).

    Article  ADS  Google Scholar 

  23. T. Minami, Y. Nishi, T. Miyata, and J. Nomoto, Appl. Phys. Express 4, 62301 (2011).

    Article  Google Scholar 

  24. K. P. Musselman, A. Marin, A. Wisnet, C. Scheu, J. L. MacManus-Driscoll, and L. Schmidt-Mende, Adv. Funct. Mater. 21, 573 (2011).

    Article  Google Scholar 

  25. B. Kramm, A. Laufer, D. Reppin, A. Kronenberger, P. Hering, A. Polity, and B. K. Meyer, Appl. Phys. Lett. 100, 094102 (2012).

    Article  ADS  Google Scholar 

  26. M. Nolan and S. D. Elliott, Thin Solid Films 516, 1468 (2008).

    Article  ADS  Google Scholar 

  27. T. Minami, Y. Nishi, and T. Miyata, Appl. Phys. Express 6, 44101 (2013).

    Article  Google Scholar 

  28. Z. N. Ng, K. Y. Chan, C. Y. Low, S. A. Kamaruddin, and M. Z. Sahdan, Ceram. Int. 41, S254 (2015).

    Article  Google Scholar 

  29. E. V. Lavrov, J. Weber, F. Börrnert, C. G. van de Walle, and R. Helbig, Phys. Rev. B 66, 165205 (2002).

    Article  ADS  Google Scholar 

  30. N. B. Colthup, L. H. Daly, and S. E. Wiberly, Introduction to Infrared and Raman Spectroscopy (Academic, New York, 1990).

    Google Scholar 

  31. G. C. Yi and B. W. Wessels, Appl. Phys. Lett. 70, 357 (1997).

    Article  ADS  Google Scholar 

  32. G. Socrates, Infrared and Raman Characteristic Group Frequencies (Wiley, New York, 2001).

    Google Scholar 

  33. A. Bhaumik, A. Haque, P. Karnati, M. F. N. Taufique, R. Patel, and K. Ghosh, Thin Solid Films 572, 126 (2014).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratoire des Matériaux Semiconducteurs et Métalliques, Université Mohammed Khider, 07000, Biskra, Algeria

    H. Trir, N. Sengouga, T. Tibermacine & L. Arab

  2. Laboratoire des Structures, Propriétés et Interactions Inter Atomiques (LASPI2A), Abbes Laghrour University, Khenchela, Algeria

    L. Radjehi & D. Abdelkader

  3. Centre de Développement des Technologies Avancées (CDTA), Algiers, Algeria

    W. Filali

  4. Laboratoire couches minces et interfaces, Département de Physique, Faculté de Sciences exactes, Université de Fréres Mentouri, Constantine1, Algeria

    N. Attaf

Authors
  1. H. Trir
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Radjehi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Sengouga
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. Tibermacine
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. Arab
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. W. Filali
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. D. Abdelkader
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. N. Attaf
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. Sengouga.

Ethics declarations

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Trir, H., Radjehi, L., Sengouga, N. et al. Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System. Semiconductors 54, 534–542 (2020). https://doi.org/10.1134/S1063782620050164

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782620050164

Keywords:

Search

Navigation