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A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

In this paper, a novel silicon carbide (SiC) super-junction U-shape metal-oxide semiconductor field-effect transistor (UMOSFET) with an integrated hetero-junction diode (HJD) is proposed and investigated using numerical simulations. The integrated HJD substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. In this structure, a p+ shielding region between the p-poly region and p-pillar protects not only the bottom gate oxide but also the p-poly region from high electric fields. Compared with conventional SJ UMOSFETs, the proposed structure reduces the peak reverse recovery current (IRR) by a factor of 2.58 and the reverse recovery charge (QRR) by a factor of 4.94. Moreover, the total switching energy loss is decreased by 50.2%.

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Funding

This research was supported by the MSIT (Ministry of Science and ICT), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2019-2018-0-01421) supervised by the IITP (Institute for Information and communications Technology Promotion), and then the IDEC (IC Design Education Center).

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  1. Department of Electronic Engineering, Sogang University, Seoul, South Korea

    J. Kim & K. Kim

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  1. J. Kim
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  2. K. Kim
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Correspondence to K. Kim.

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Kim, J., Kim, K. A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss. Semiconductors 54, 587–595 (2020). https://doi.org/10.1134/S1063782620050061

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  • DOI: https://doi.org/10.1134/S1063782620050061

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