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Planar Triode for Vacuum Microelectronics

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Abstract

The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model of the device, which qualitatively confirm the main theoretical conclusions.

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Authors and Affiliations

  1. Institute of Applied Mathematics and Automation, Kabardino-Balkaria Scientific Center, Russian Academy of Sciences, 360000, Nalchik, Kabardino-Balkar Republic, Russia

    S. Sh. Rekhviashvili

  2. Kabardino-Balkarian State University, 360004, Nalchik, Kabardino-Balkar Republic, Russia

    D. S. Gaev

Authors
  1. S. Sh. Rekhviashvili
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  2. D. S. Gaev
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Correspondence to S. Sh. Rekhviashvili.

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Rekhviashvili, S.S., Gaev, D.S. Planar Triode for Vacuum Microelectronics. Russ Microelectron 49, 210–213 (2020). https://doi.org/10.1134/S1063739720020079

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  • DOI: https://doi.org/10.1134/S1063739720020079

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