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Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect

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Abstract

The modern designs of magnetic field transducers (MFTs) based on nanostructures with the spin-tunnel magnetoresistive effect (STMR) and the main areas of their application are considered. The results of an experimental study of two constructive versions of magnetic field transducers with an even and odd output characteristic are presented. The sensitivity of the fabricated MFT model based on the STMR effect with an even output characteristic is 0.54 mV/(V Oe) in the range of a magnetic field with the intensity ranging from 0 to 40 Oe. The results of dependency conversion are presented. R(H) nanostructures with the STMR effect by thermomagnetic treatment to reduce hysteresis and increase linearity in the working range of the magnetic field. The sensitivity of the fabricated MFT model based on the STMR effect with an odd output characteristic is 5.4 mV/(V Oe) in the range of a magnetic field with a strength of ±1 Oe. In conclusion, promising directions of the development of magnetic field converter (MFC) structures based on nanostructures with the STMR effect are described.

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ACKNOWLEDGMENTS

The STMR parameters of nanostructures were studied using specialized equipment of the central control center “Functional Control and Diagnostics of Micro- and Nanosystem Systems” based on NPK Technological Center.

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Authors and Affiliations

  1. SPC Technological Center, 124498, Zelenograd, Russia

    D. V. Vasil’ev, D. V. Kostyuk, E. P. Orlov, D. A. Zhukov, Yu. V. Kazakov, V. V. Amelichev & P. A. Belyakov

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  1. D. V. Vasil’ev
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  2. D. V. Kostyuk
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  3. E. P. Orlov
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  4. D. A. Zhukov
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  5. Yu. V. Kazakov
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  6. V. V. Amelichev
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  7. P. A. Belyakov
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Corresponding author

Correspondence to D. V. Vasil’ev.

Additional information

Abbreviation: AMR, anisotropic magnetoresistive; EMA, easy magnetization axis; MFC, magnetic field converter; MFT-STMR, magnetic field transducers based on spin-tunnel magnetoresistive nanostructures; SAF—synthetic antiferromagnet; SVMR, spin-valve magnetoresistive; STMR, spin-tunnel magnetoresistive; STJ, spin-tunnel transition; MRAM, magnetoresistive random-access memory.

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Vasil’ev, D.V., Kostyuk, D.V., Orlov, E.P. et al. Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect. Russ Microelectron 49, 132–138 (2020). https://doi.org/10.1134/S1063739720010138

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  • DOI: https://doi.org/10.1134/S1063739720010138

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