Abstract—
The low-temperature (80–190 K) thermoelectric power of TlCrS2 has been shown to follow the relation α(T) = (0.2T – 13) μV/K, characteristic of charge transport through localized states in the band gap. As the temperature is raised from 338 to 370 K, where the electrical conductivity is dominated by charge carriers excited to the allowed band, the thermoelectric power varies of TlCrS2 is inversely proportional to temperature. The temperature coefficient of the activation energy for conduction in TlCrS2 is γ = 2.06 × 10–4 eV/K. We have determined parameters of localized states in TlCrS2.
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Funding
This work was supported by the Azerbaijan Republic President’s Science Development Foundation (grant nos. EİF-BGM-3-BRFTF-2+/2017-15/05/1-M-13 and EİF-BGM-4-RFTF-1/2017-21/05/1-M-07) and SOCAR (project no. 12LR-AMEA).
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Mustafaeva, S.N., Asadov, S.M. & Jabbarov, A.I. Hopping Thermoelectric Power in TlCrS2. Inorg Mater 56, 333–337 (2020). https://doi.org/10.1134/S0020168520040093
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DOI: https://doi.org/10.1134/S0020168520040093