Abstract
A Fully Differential Write Assist 10T (FDWA10T) SRAM cell has been proposed in this work. The various design metrics and their behavior under severe process variation have been analyzed in this paper and have been compared with other state-of-the-art designs - FD8T, SEDF9T, BI11T, WWL12T and D12T cells. The FDWA10T cell shows \(1.47\times/1.73\times/2.09\times\) shorter \(\textit{T}_{\mathrm{RA}}\) than that of D12T/BI11T/SEDF9T and \(1.20\times/1.59\times/1.86\times/4.33\times\) shorter \(\textit{T}_{\mathrm{WA}}\) than that of D12T/WWL12T/SEDF9T/BI11T. In addition, it shows \(1.05\times\) narrower spread in \(\textit{T}_{\mathrm{RA}}\) than that of BI11T and \(3.94\times\) higher RSNM than that of FD8T. A \(4.10\times\) improvement in WSNM is also observed when compared to SEDF9T/D12T/WWL12T. The FDWA10T cell also exhibits \(1.03\times /1.03\times /1.06\times /2.09\times\) lower hold power (\(\textit{H}_{\mathrm{PWR}}\)) consumption than that of D12T/FD8T/SEDF9T/WWL12T and consumes \(1.14\times /1.26\times /1.23\times\) lesser area when compared to BI11T/WWL12T/D12T. These improvements are obtained at the cost of \(1.50\times /2.42\times\) longer \(\textit{T}_{\mathrm{RA}}\)/\(\textit{T}_{\mathrm{WA}}\) than that of FD8T, \(6.4\times\) higher \(\textit{H}_{\mathrm{PWR}}\) dissipation than that of BI11T and \(1.10\times /1.15\times\) higher area consumption than that of FD8T/SEDF9T.
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Pal, S., Bose, S. & Islam, A. A low power SRAM cell design for wireless sensor network applications. Microsyst Technol 26, 2325–2335 (2020). https://doi.org/10.1007/s00542-019-04708-5
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DOI: https://doi.org/10.1007/s00542-019-04708-5