Abstract
The nanocrystalline V2O5 thin films were prepared via a dip-coating method by controlled hydrolytic polycondensation of the vanadium (V) oxytriisopropoxide (VO(OC3H7)3) in isopropanol. For Ti doping, titanium (IV) isopropoxide (Ti(OC3H7)4) was used. The as-deposited films after thermal treatment at 500 °C under ambient air for 30 min were subjected to characterizations for their structural, morphological, and electrochromic properties. The X-ray diffraction (XRD) analyses of the films confirm an orthorhombic phase of vanadium pentaoxide (PDF # 41-1426), which is also supported by Fourier transform infrared (FTIR) analyses. The analyses of electrochromic properties of the films divulge that the 5 at% Ti-doped film has the fast switching time (coloration time: 0.59 s and bleaching time: 0.42 s), high net charge density and good electrochromic reversibility. The Nyquist impedance plots have been evaluated by fit and simulation analysis using Nova software, taking into account an equivalent electrical circuit model.
Highlights
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Post-heat treated films possess an orthorhombic phase of V2O5.
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Upon Ti doping, the film morphology changes to nanorods.
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The roughness of the film decreases upon Ti doping.
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5 at% Ti-doped film has the fast switching response time.
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Acknowledgements
The authors gratefully acknowledge Centre for Interdisciplinary Research, MNNIT Allahabad, India for providing XRD and UV–Vis measurements; Advanced Center for Materials Science, IIT Kanpur, India for FESEM and EDS; and Department of Materials and Metallurgical Engineering, IIT Kanpur, India for AFM characterization. They would wish to further express their gratitude to Director, MNNIT Allahabad, India, for providing financial support under the project, Third Phase of Technical Education Quality Improvement Programme (referred to as TEQIP-III), Ministry of Human Resource Development, Government of India.
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Kumar, A., Sahay, P.P. Influence of Ti doping on the microstructural and electrochromic properties of dip-coated nanocrystalline V2O5 thin films. J Sol-Gel Sci Technol 95, 34–51 (2020). https://doi.org/10.1007/s10971-020-05298-9
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DOI: https://doi.org/10.1007/s10971-020-05298-9